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A Bifunctional Memristor Enables Multiple Neuromorphic Computing Applications
As a promising building block of the emerging neuromorphic computing hardware, memristive structures with multi‐functionalities are highly desired to implement diversified computing applications in a single device. However, the demonstration of such multi‐functional structures remains limited. In th...
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Published in: | Advanced electronic materials 2022-07, Vol.8 (7), p.n/a |
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Main Authors: | , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | As a promising building block of the emerging neuromorphic computing hardware, memristive structures with multi‐functionalities are highly desired to implement diversified computing applications in a single device. However, the demonstration of such multi‐functional structures remains limited. In this work, an Ag/GeS/Pt‐based bifunctional memory structure with both long‐term and short‐term memristive behaviors is reported, enabling multiple neuromorphic computing applications in a single device. It is found that the unexpected short‐term switching in Ag/GeS/Pt can not only be used to simulate learning/relearning and forgetting behavior but can also be implemented for reservoir computing. While for long‐term switching memristive behavior, its application is demonstrated as the traditional memory. The work reveals a novel coexistence of the two types of resistive switching, shedding light on various neuromorphic computing applications such as reservoir computing and traditional memory realized in a single memristive device.
While nonvolatile filamentary resistive switching of Ag/GeS/Pt memristor allows traditional memory application, unexpected volatile diffusion‐based resistive switching of the device allows hardware realization of reservoir computing paradigm. Thus, multiple applications based on different resistive switching mechanisms are demonstrated in a single device and the underlying physics of the volatile behavior is extensively investigated. |
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ISSN: | 2199-160X 2199-160X |
DOI: | 10.1002/aelm.202101235 |