Comproportionation Reaction Synthesis to Realize High‐Performance Water‐Induced Metal‐Oxide Thin‐Film Transistors

Solution‐processed metal‐oxide thin films have been widely studied in low‐power and flexible electronics. However, the high temperature required to form a condensed and uniform film limits their applications in flexible and low‐cost electronics. Here, a novel and environmental‐friendly comproportion...

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Bibliographic Details
Published in:Advanced electronic materials 2020-08, Vol.6 (8), p.n/a
Main Authors: Liu, Qihan, Zhao, Chun, Mitrovic, Ivona Z., Xu, Wangying, Yang, Li, Zhao, Ce Zhou
Format: Article
Language:English
Subjects:
aqueous route
low operating voltage
low temperature processing
metal‐oxide thin‐film transistors
solution combustion synthesis
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Summary:Solution‐processed metal‐oxide thin films have been widely studied in low‐power and flexible electronics. However, the high temperature required to form a condensed and uniform film limits their applications in flexible and low‐cost electronics. Here, a novel and environmental‐friendly comproportionation reaction synthesis (CRS) is presented to obtain amorphous aluminum oxide (AlOx) thin films for solution‐processed thin‐film transistors (TFTs) employing water as the precursor solvent. The thermal decomposition of CRS‐AlOx precursor is completed at ≈300 °C, which is 100 °C lower than that of the conventional water‐induced AlOx. The morphological, optical, compositional, and electrical properties of CRS‐AlOx dielectric films are studied systematically. Meanwhile, TFTs based on water‐induced In2O3 metal oxide semiconductor layers deposited on these dielectrics at low temperatures are formed and characterized. Compared with TFTs based on conventional AlOx showing low mobility and low clockwise hysteresis, In2O3 TFTs based on CRS‐AlOx exhibit improved electrical performance and counterclockwise hysteresis in the transfer curves. Water‐induced TFTs fabricated on CRS‐AlOx formed at a low temperature of 250 °C have average mobility of 98 cm2 V−1 s−1. Through chemical composition characterization and electrical characterization, the high mobilities of TFTs based on CRS‐AlOx dielectrics are correlated to trap states, which resulted in counterclockwise hysteresis in the transfer curves. A novel and environmental‐friendly comproportionation reaction synthesis (CRS) is presented to obtain amorphous aluminum oxide (AlOx) thin films for solution‐processed In2O3 thin‐film transistors (TFTs) employing water as the precursor solvent. High‐performance TFTs with counterclockwise attributed to trap states are achieved at low temperatures. This approach provides a low‐cost and environmental‐friendly route to obtain high‐mobility TFTs.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.202000072