Source‐Gated Transistors Based on Solution Processed Silicon Nanowires for Low Power Applications

The solution‐based assembly of field‐effect transistors using nanowire inks, processed at low temperatures, offers an enormous potential for low power applications envisioned for the “Internet of Things,” including power management sensor circuits and electronics for in vivo bioimplants. Such low‐te...

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Bibliographic Details
Published in:Advanced electronic materials 2017-01, Vol.3 (1), p.n/a
Main Authors: Opoku, Charles, Sporea, Radu A., Stolojan, Vlad, Silva, S. Ravi P., Shkunov, Maxim
Format: Article
Language:English
Subjects:
field‐effect transistors
Schottky barrier
semiconductor nanowires
solution‐processed electronics
spray deposition
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Summary:The solution‐based assembly of field‐effect transistors using nanowire inks, processed at low temperatures, offers an enormous potential for low power applications envisioned for the “Internet of Things,” including power management sensor circuits and electronics for in vivo bioimplants. Such low‐temperature assembly, however, yields substantial contact potential barriers, with limited capacity for high current applications. In this study, the Schottky effect in a specific transistor configuration is utilized to achieve much reduced power consumption, with low saturation voltages (≈1 V), with relatively thick 230‐nm SiO2 dielectrics. These source‐gated transistors (SGTs) employ solution‐deposited silicon nanowire arrays. A range of metal electrode work functions are investigated as device contacts and SGT operation is realized only in the structures with high source contact barriers. Such devices show very early drain current pinch‐off, abruptly saturating at low drain voltages. The authors show that drain‐current modulation is achieved via the gate field acting on the source barrier and lowering it through image force effects. Activation energy measurements reveal gate‐induced source barrier lowering of ≈3 meV V−1. Numerical simulations show excellent correlation with the experimental data. These features, coupled with flat current saturation characteristics, are ideal for a range of low power applications, including wearable electronics and autonomous systems. The solution‐processed silicon nanowire source‐gated‐transistor (SGT) concept is demonstrated, where unavoidable Schottky contacts are turned into a significant power‐saving advantage of three orders of magnitude when compared to traditional nanowire field‐effect transistor design with ohmic contacts. SGT nano­wire device fabrication is compatible with both rigid and flexible substrates and offers a printable electronics route toward low‐power‐consumption electronics.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201600256