Modulating the Locally Excited States with a Regulating Substituent for Highly Efficient Red/Near‐Infrared Thermally Activated Delayed Fluorescence Emitters

Abstract Developing highly efficient red/near‐infrared (NIR) thermally activated delayed fluorescence (TADF) materials is important for organic light‐emitting diodes (OLEDs). Here, two TADF emitters, APTT and APTI, which have the same D/A backbone but different attaching groups at acenaphtho‐[1,2‐b]...

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Published in:Advanced functional materials 2024-05
Main Authors: Feng, Zi‐Qi, Yu, You‐Jun, Song, Zi‐Yu, Song, Min, Zuo, Peng, Jiang, Zuo‐Quan, Zhou, Dong‐Ying, Liao, Liang‐Sheng
Format: Article
Language:English
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Summary:Abstract Developing highly efficient red/near‐infrared (NIR) thermally activated delayed fluorescence (TADF) materials is important for organic light‐emitting diodes (OLEDs). Here, two TADF emitters, APTT and APTI, which have the same D/A backbone but different attaching groups at acenaphtho‐[1,2‐b]pyrazine‐8,9‐dicarbonitrile (APDC) core, are reported. The appended regulating groups can not only suppress the D/A rotation due to the space confinement effects but also modulate the locally excited triplet state ( 3 LE). The improved molecular rigidity suppresses the non‐radiative process, accounting for the improved photoluminescence quantum yields (PLQYs), while the modulated 3 LE promotes the reverse intersystem crossing (RISC) process due to the high utilization efficiency of triplets. Consequently, both APTT and APTI demonstrate high PLQY and fast RISC process, thereby enhancing TADF efficiency. The doped devices based on APTT and APTI achieve maximum external quantum efficiency (EQE max ) values of 20.5% and 25.4% with emission peaks at 664 and 670 nm, respectively. The non‐doped devices of APTT and APTI achieve the EQE max of 2.8% and 2.9% with emission peaks at 788 and 794 nm, respectively. Encouragingly, the non‐doped devices of APTI have set new records for near‐infrared TADF OLEDs based on the APDC core. This study provides an efficient approach to modulating the optoelectronic properties of highly efficient NIR TADF OLEDs.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202403831