Highly Nonlinear Memory Selectors with Ultrathin MoS 2 /WSe 2 /MoS 2 Heterojunction

Abstract Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small fo...

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Published in:Advanced functional materials 2024-04, Vol.34 (15)
Main Authors: Chen, Hongye, Wan, Tianqing, Zhou, Yue, Yan, Jianmin, Chen, Changsheng, Xu, Zhihang, Zhang, Songge, Zhu, Ye, Yu, Hongyu, Chai, Yang
Format: Article
Language:English
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Summary:Abstract Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low‐temperature processing for ultrahigh‐density data storage. Here, an ultrathin two‐terminal n‐p‐n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low‐temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade‐off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p‐type WSe 2 in MoS 2 /WSe 2 /MoS 2 n‐p‐n selector for a punch‐through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 10 3 A cm −2 ) simultaneously. The n‐p‐n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material‐based one‐selector one‐resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202304242