Epitaxial growth and thermal-conductivity limit of singlecrystalline Bi2Se3/In2Se3 superlattices on mica

Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In2Se3 （BS/IS） superlattices with minimized defects are prepared on fluorophlogopite...

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Published in:纳米研究：英文版 2017, Vol.10 (1), p.247-254
Main Author: Wuyang Ren Handong Li Lei Gao Yong Li Zhongyang Zhang Chengjia Long Haining Ji Xiaobin Niu Yuan Lin Zhiming Wang
Format: Article
Language:English
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Summary:Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In2Se3 （BS/IS） superlattices with minimized defects are prepared on fluorophlogopite mica by molecular beam epitaxy. The cross-plane heat-conducting properties of the BS/IS superlattices are demonstrated to depend precisely on the period thicknesses and constituents of the superlattices, where a minimum in the thermal conductivity indicates a crossover from particle-like to wave-like phonon transport in the superlattices. The thermal-conductivity minimum of the BS/IS superlattices is nearly one order of magnitude lower than that of intrinsic BS film.
ISSN:1998-0124
1998-0000