P-doped Germanium Nanowires with Fanobroadening in Raman Spectrum

The optimized growth conditions for high density germanium（Ge） nanowires and P-doped Ge nanowires on Si（111） substrate were investigated,the phosphorus（P）-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition（VLS-LPCVD） of Ge nanowires was conducted...

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Published in:武汉理工大学学报：材料科学英文版 2016 (1), p.52-57
Main Author: HE Liang XIONG Biao ZHOU Peng LUO Wen SONG Peishuai WANG Xukun HAO Zhimeng YANG Xiao NIU Chaojiang TIAN Xiaocong YAN Mengyu MAI Liqiang
Format: Article
Language:English
Subjects:
Au催化剂
p型掺杂
Si（111）衬底
低压化学气相沉积
扫描电子显微镜
显微拉曼光谱
纳米线
锗
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Summary:The optimized growth conditions for high density germanium（Ge） nanowires and P-doped Ge nanowires on Si（111） substrate were investigated,the phosphorus（P）-doping in Ge nanowires was also characterized.Vapor liquid solid-low pressure chemical vapor deposition（VLS-LPCVD） of Ge nanowires was conducted with different thicknesses of Au film as catalyst,different flow rates of GeH4 as precursor and PH3/Ar as co-flow.The morphologies of the Ge nanowires were characterized by scanning electron microscopy（SEM）,the P-doping was verified by micro Raman spectroscopy via measuring the P local vibrational peak（342-345 cm~（-1）） and asymmetric broadening of Ge-Ge vibrational peak（about 300 cm~（-1）,respectively.The characterization results show that 1 run thickness of Au catalyst is the most suitable condition among thicknesses of 0.1,1,5,and 10 nm for the growth of high density Ge nanowires at 300 and 350℃,and 0.5 sccm is the best flow rate of PH3/Ar to grow high density and large scale P-doped Ge nanowires among flow rates of 0.5,1 and 2sccm.The P impurity can be doped into Ge nanowires effectively during LPCVD process at 350 ℃.
ISSN:1000-2413
1993-0437