The effect of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on their Al/Al2OJInGaAs MOS capacitors properties

The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leaka...

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Bibliographic Details
Published in:半导体学报：英文版 2016 (2), p.155-159
Main Author: 林子曾 曹明民 王盛凯 李琦 肖功利 高喜 刘洪刚 李海鸥
Format: Article
Language:English
Subjects:
I-V特性
InGaAs
MOS电容器
氧化铝
氮化
电容性能
硫钝化
表面
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Summary:The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.
ISSN:1674-4926