Oxidation-based wet-etching method for AIGaN/GaN structure with different oxidation times and temperatures

In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly d...

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Bibliographic Details
Published in:稀有金属：英文版 2015 (1), p.1-5
Main Author: Yang Liu Jin-Yan Wang Zhe Xu Jin-Bao Cai Mao-Jun Wang Min Yu Bing Xie Wen-Gang Wu
Format: Article
Language:English
Subjects:
AlGaN
基础
氧化时间
氧化温度
氧化过程
热氧化
结构
蚀刻法
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Summary:In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.
ISSN:1001-0521
1867-7185