A novel high speed lateral IGBT with a self-driven second gate

A novel lateral IGBT with a second gate on the emitter portion is presented.A PMOS transistor,driven by the proposed device itself,is used to short the PN junction at the emitter while turned off.Low on state voltage and fast turn off speed are obtained without side-effects such as snapback I-V char...

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Bibliographic Details
Published in:半导体学报 2012, Vol.33 (3), p.28-31
Main Author: Hu Hao Chen Xingbi
Format: Article
Language:Chinese
Subjects:
IGBT
PMOS晶体管
下降时间
关闭速度
发射部分
数值模拟
电压下降
驱动
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Summary:A novel lateral IGBT with a second gate on the emitter portion is presented.A PMOS transistor,driven by the proposed device itself,is used to short the PN junction at the emitter while turned off.Low on state voltage and fast turn off speed are obtained without side-effects such as snapback I-V characteristics and difficulties of process complexity.Numerical simulation results show a drop of fall time from 120 to 12 ns and no increase of on state voltage.
ISSN:1674-4926