Modeling to predict the time evolution of negative bias temperature instability（NBTI） induced single event transient pulse broadening

An analytical model is proposed to calculate single event transient （SET） pulse width with bulk complementary metal oxide semiconductor （CMOS） technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability （NBTI） degradation model, a...

Full description

Saved in:
Bibliographic Details
Published in:中国科学：技术科学英文版 2012, Vol.55 (4), p.1101-1106
Main Author: CHEN ShuMing CHEN JianJun CHI YaQing LIU FanYu HE YiBai
Format: Article
Language:English
Subjects:
NBTI
不稳定性
互补金属氧化物半导体
偏置
时间演化
模型预测
温度
瞬态脉冲
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An analytical model is proposed to calculate single event transient （SET） pulse width with bulk complementary metal oxide semiconductor （CMOS） technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability （NBTI） degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis （SPICE） are used to verify the proposed model.
ISSN:1674-7321
1869-1900