Investigation of the lateral spread of erbium ions implanted in silicon crystal

The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The resu...

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Bibliographic Details
Published in:Chinese physics B 2010-11, Vol.19 (11), p.336-339, Article 113403
Main Author: 秦希峰 陈明 王雪林 梁毅 张少梅
Format: Article
Language:English
Subjects:
TRIM
卢瑟福背散射
硅晶体
硅样品
离子注入
离子输运
铒离子
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Summary:The erbium ions at energy of 400 keV and dose of 5× 10^15 ions/cm^2 were implanted into silicon single crystals at room temperature at the angles of 0°,45° and 60°. The lateral spread of 400 keV erbium ions implanted in silicon sample was measured by the Rutherford backscattering technique. The results show that the measured values were in good agreement with those obtained from the prediction of TRIM＇98 （Transport of Ions in Matter） and SRIM2006 （Stopping and Range of Ions in Matter） codes.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/11/113403