Preparation of size controllable copper nanocrystals for nonvolatile memory applications

A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship b...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2010-10, Vol.19 (10), p.593-596, Article 108102
Main Authors: Li, Wang, Hong-Fang, Sun, Hui-Hua, Zhou, Jing, Zhu
Format: Article
Language:English
Subjects:
纳米晶体
纳米铜
非易失性存储器
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/10/108102