Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy

Infrared reflectance spectra have been widely used to measure layer thickness based either on calculation or on curve fitting, and two traditional methods for thickness determination have been studied. Considering the disadvantages of those two methods, we propose a new fitting model based on the fi...

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Bibliographic Details
Published in:Chinese physics letters 2010-06, Vol.27 (6), p.240-243
Main Authors: Li, Zhi-Yun, Sun, Ji-Wei, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan
Format: Article
Language:English
Subjects:
Curve fitting
Fittings
Infrared
Mathematical models
Reflectance
Reflectivity
Silicon carbide
Spectra
传统方法
拟合模型
曲线拟合
测定方法
碳化硅
红外光谱
红外反射光谱
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Summary:Infrared reflectance spectra have been widely used to measure layer thickness based either on calculation or on curve fitting, and two traditional methods for thickness determination have been studied. Considering the disadvantages of those two methods, we propose a new fitting model based on the fitting of the fringe order difference. In comparison with the measured results, the new fitting model shows its superiority not only for its stable and accurate results which have great agreement with the results from SEM, but also for its simple and quick fitting process.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/6/068103