Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors

We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal–insulator transition (MIT) in their transfer curves....

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Bibliographic Details
Published in:ACS nano 2019-01, Vol.13 (1), p.803-811
Main Authors: Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C, Dowben, Peter A, Sinitskii, Alexander, Singisetti, Uttam, Bird, Jonathan P
Format: Article
Language:English
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Summary:We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal–insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ∼20–30 cm2/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.8b08260