High-Density Patterning of InGaZnO by CH4: a Comparative Study of RIE and Pulsed Plasma ALE

InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contin...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2022-07, Vol.14 (29), p.34029-34039
Main Authors: Kundu, Shreya, Decoster, Stefan, Bezard, Philippe, Nalin Mehta, Ankit, Dekkers, Harold, Lazzarino, Frederic
Format: Article
Language:English
Subjects:
Surfaces, Interfaces, and Applications
Online Access:Get full text
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Summary:InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated for a broad range of applications such as high-resolution displays, high-density memories, and high-speed computing. However, its potential to be a key material for next-generation devices is strongly contingent on developing patterning processes with minimal damage at nanoscale dimensions. IGZO can be etched using CH4-based plasma. Although the etched by-products are volatile, there remains a concern that passivationan associated effect arising from the use of a hydrocarbon etchantmay inhibit the patterning process. However, there has been limited discussion on the CH4-based etching of IGZO and the subsequent patterning challenges arising with pitch scaling (
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.2c07514