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Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metal–Organic Chemical Vapor Deposition

High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid p...

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Bibliographic Details
Published in:Chemistry of materials 2017-08, Vol.29 (15), p.6279-6288
Main Authors: Kalanyan, Berc, Kimes, William A, Beams, Ryan, Stranick, Stephan J, Garratt, Elias, Kalish, Irina, Davydov, Albert V, Kanjolia, Ravindra K, Maslar, James E
Format: Article
Language:English
Online Access:Get full text
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Summary:High-volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultrathin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor-phase flux and gas-phase chemistry, which are critical for scaling up laboratory processes to manufacturing settings. To address these issues, we report a new pulsed metal–organic chemical vapor deposition (MOCVD) route for MoS2 film growth in a research-grade single-wafer reactor. Using bis­(tert-butylimido)­bis­(dimethylamido)molybdenum and diethyl disulfide, we deposit MoS2 films from ∼1 nm to ∼25 nm in thickness on SiO2/Si substrates. We show that layered 2H-MoS2 can be produced at comparatively low reaction temperatures of 591 °C at short deposition times, approximately 90 s for few-layer films. In addition to the growth studies performed on SiO2/Si, films with wafer-level uniformity are demonstrated on 50 mm quartz wafers. Process chemistry and impurity incorporation from precursors are also discussed. This low-temperature and fast process highlights the opportunities presented by metal–organic reagents in the controlled synthesis of TMDs.
ISSN:0897-4756
1520-5002
DOI:10.1021/acs.chemmater.7b01367