A modelling approach for long-term degradation of thin film silicon photovoltaic modules

This paper introduces a new concept of approach for modelling the ageing behaviour of a-Si PV modules with voltage-dependent photocurrent. The basis is the equivalent circuit of a PV module, specifically the modified single diode model. The parameters are extracted from I-V measurements. Ageing is t...

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Main Authors:	Jiang Zhu, K. Astawa, Thomas R. Betts, Ralph Gottschalg
Format:	Default Conference proceeding
Published:	2010
Subjects:	untagged
Online Access:	https://hdl.handle.net/2134/8167
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id	rr-article-9558482
record_format	Figshare
spelling	rr-article-95584822010-01-01T00:00:00Z A modelling approach for long-term degradation of thin film silicon photovoltaic modules Jiang Zhu (40858) K. Astawa (7210562) Thomas R. Betts (7164998) Ralph Gottschalg (1247661) untagged This paper introduces a new concept of approach for modelling the ageing behaviour of a-Si PV modules with voltage-dependent photocurrent. The basis is the equivalent circuit of a PV module, specifically the modified single diode model. The parameters are extracted from I-V measurements. Ageing is then analysed by relating these to the environmental stresses seen by the devices. This paper focuses on the behaviour the product of carrier mobility and carrier life time (μτ), since the μτ has been considered to be an important indicator for module degradation of amorphous silicon thin film devices. A fitting approach for determining μτ is discussed and extended to be applied to the outdoor module IV data. Three a-Si modules of the same type operating under different temperature conditions are analysed to identify changes in the μT. 2010-01-01T00:00:00Z Text Conference contribution 2134/8167 https://figshare.com/articles/conference_contribution/A_modelling_approach_for_long-term_degradation_of_thin_film_silicon_photovoltaic_modules/9558482 CC BY-NC-ND 4.0
institution	Loughborough University
collection	Figshare
topic	untagged
spellingShingle	untagged Jiang Zhu K. Astawa Thomas R. Betts Ralph Gottschalg A modelling approach for long-term degradation of thin film silicon photovoltaic modules
description	This paper introduces a new concept of approach for modelling the ageing behaviour of a-Si PV modules with voltage-dependent photocurrent. The basis is the equivalent circuit of a PV module, specifically the modified single diode model. The parameters are extracted from I-V measurements. Ageing is then analysed by relating these to the environmental stresses seen by the devices. This paper focuses on the behaviour the product of carrier mobility and carrier life time (μτ), since the μτ has been considered to be an important indicator for module degradation of amorphous silicon thin film devices. A fitting approach for determining μτ is discussed and extended to be applied to the outdoor module IV data. Three a-Si modules of the same type operating under different temperature conditions are analysed to identify changes in the μT.
format	Default Conference proceeding
author	Jiang Zhu K. Astawa Thomas R. Betts Ralph Gottschalg
author_facet	Jiang Zhu K. Astawa Thomas R. Betts Ralph Gottschalg
author_sort	Jiang Zhu (40858)
title	A modelling approach for long-term degradation of thin film silicon photovoltaic modules
title_short	A modelling approach for long-term degradation of thin film silicon photovoltaic modules
title_full	A modelling approach for long-term degradation of thin film silicon photovoltaic modules
title_fullStr	A modelling approach for long-term degradation of thin film silicon photovoltaic modules
title_full_unstemmed	A modelling approach for long-term degradation of thin film silicon photovoltaic modules
title_sort	modelling approach for long-term degradation of thin film silicon photovoltaic modules
publishDate	2010
url	https://hdl.handle.net/2134/8167
_version_	1797287648363020288

A modelling approach for long-term degradation of thin film silicon photovoltaic modules

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