Power handling of a photoconductive microwave switch
The power handling performance of a photoconductive microwave switch up to an RF input power of 44dBm (25W) is presented. The switch consists of a lightly doped die of silicon mounted over a gap in a transmission line. A 2GHz signal is applied through the switch and the 1dB compression point is anal...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Default Conference proceeding |
| Published: |
2016
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/24324 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|