Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN–AlN buffer layer
The structural properties of 2 mm thick N-face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited the propagation...
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| Main Authors: | , , , , , , , |
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| Format: | Default Article |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/20261 |
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