Electron microscopy of InGaN nanopillars spontaneously grown on Si(111) substrates
The mopholological, structural and chemical properties of InxGa1−xN nanopillars directly grown on Si (111) substrates, by molecular beam epitaxy, were investigated employing transmission electron microscopy related techniques. Single crystalline, single phase nanopillars were observed exhibiting a l...
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| Main Authors: | , , , , , , , |
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| Format: | Default Article |
| Published: |
2010
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/20255 |
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