Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information proc...

Full description

Saved in:

Bibliographic Details
Main Authors:	Mark Greenaway, E.E. Vdovin, D. Ghazaryan, A. Misra, A. Mishchenko, Y. Cao, Z. Wang, J.R. Wallbank, M. Holwill, Yu. N. Khanin, S.V. Morozov, K. Watanabe, T. Taniguchi, O. Makarovsky, T.M. Fromhold, A. Patane, A.K. Geim, V.I. Fal'ko, K.S. Novoselov, Laurence Eaves
Format:	Default Article
Published:	2018
Subjects:	Other physical sciences not elsewhere classified untagged Physical Sciences not elsewhere classified
Online Access:	https://hdl.handle.net/2134/36465
Tags:	Add Tag No Tags, Be the first to tag this record!

id	rr-article-9408386
record_format	Figshare
spelling	rr-article-94083862018-12-14T00:00:00Z Tunnel spectroscopy of localised electronic states in hexagonal boron nitride Mark Greenaway (3135495) E.E. Vdovin (7170911) D. Ghazaryan (4965682) A. Misra (1571932) A. Mishchenko (1511977) Y. Cao (1335501) Z. Wang (70993) J.R. Wallbank (7170914) M. Holwill (7170917) Yu. N. Khanin (7170920) S.V. Morozov (7170923) K. Watanabe (1466956) T. Taniguchi (1466944) O. Makarovsky (2245987) T.M. Fromhold (7170578) A. Patane (7170581) A.K. Geim (7170926) V.I. Fal'ko (7170929) K.S. Novoselov (7170932) Laurence Eaves (4677826) Other physical sciences not elsewhere classified untagged Physical Sciences not elsewhere classified Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomiclayer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated. 2018-12-14T00:00:00Z Text Journal contribution 2134/36465 https://figshare.com/articles/journal_contribution/Tunnel_spectroscopy_of_localised_electronic_states_in_hexagonal_boron_nitride/9408386 CC BY 4.0
institution	Loughborough University
collection	Figshare
topic	Other physical sciences not elsewhere classified untagged Physical Sciences not elsewhere classified
spellingShingle	Other physical sciences not elsewhere classified untagged Physical Sciences not elsewhere classified Mark Greenaway E.E. Vdovin D. Ghazaryan A. Misra A. Mishchenko Y. Cao Z. Wang J.R. Wallbank M. Holwill Yu. N. Khanin S.V. Morozov K. Watanabe T. Taniguchi O. Makarovsky T.M. Fromhold A. Patane A.K. Geim V.I. Fal'ko K.S. Novoselov Laurence Eaves Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
description	Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomiclayer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
format	Default Article
author	Mark Greenaway E.E. Vdovin D. Ghazaryan A. Misra A. Mishchenko Y. Cao Z. Wang J.R. Wallbank M. Holwill Yu. N. Khanin S.V. Morozov K. Watanabe T. Taniguchi O. Makarovsky T.M. Fromhold A. Patane A.K. Geim V.I. Fal'ko K.S. Novoselov Laurence Eaves
author_facet	Mark Greenaway E.E. Vdovin D. Ghazaryan A. Misra A. Mishchenko Y. Cao Z. Wang J.R. Wallbank M. Holwill Yu. N. Khanin S.V. Morozov K. Watanabe T. Taniguchi O. Makarovsky T.M. Fromhold A. Patane A.K. Geim V.I. Fal'ko K.S. Novoselov Laurence Eaves
author_sort	Mark Greenaway (3135495)
title	Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
title_short	Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
title_full	Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
title_fullStr	Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
title_full_unstemmed	Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
title_sort	tunnel spectroscopy of localised electronic states in hexagonal boron nitride
publishDate	2018
url	https://hdl.handle.net/2134/36465
_version_	1797461961620848640

Tunnel spectroscopy of localised electronic states in hexagonal boron nitride

Similar Items