In-situ micro bend testing of SiC and the effects of Ga+ ion damage
The Young’s modulus of 6H single crystal silicon carbide (SiC) was tested with micro cantilevers that had a range of cross-sectional dimensions with surfaces cleaned under different accelerating voltages of Ga+ beam. A clear size effect is seen with Young’s modulus decreasing as the cross-sectional...
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| Main Authors: | , , , |
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| Format: | Default Conference proceeding |
| Published: |
2017
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| Subjects: | |
| Online Access: | https://hdl.handle.net/2134/26029 |
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