Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degr...

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Bibliographic Details
Published in:IEEE photonics technology letters 1992-11, Vol.4 (11), p.1189-1191
Main Authors: Derry, P.L., Hager, H.E., Chiu, K.C., Booher, D.J., Miao, E.C., Hong, C.S.
Format: Article
Language:English
Subjects:
Design optimization
Engineering
Engineering, Electrical & Electronic
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Indium gallium arsenide
Lasers
Optical design
Optical materials
Optics
Physical Sciences
Physics
Physics, Applied
Power generation
Power lasers
Quantum well lasers
Reflectivity
Science & Technology
Semiconductor lasers
laser diodes
Technology
Threshold current
Waveguide lasers
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Summary:The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.166937