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Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
InAs/GaSb double quantum wells separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs [ E f s ( InAs ) ] for realizing independent electric contacts to each well. In particular...
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| Published in: | Applied physics letters 2023-03, Vol.122 (12) |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c362t-7bda9aa29a8a49ad288c3d30b8d489ea7e92623f9ff3b9073921234d87b2a6e33 |
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| container_issue | 12 |
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| container_title | Applied physics letters |
| container_volume | 122 |
| creator | Wu, Xingjun Wang, Jianhuan Huang, Miaoling Yan, Shili Du, Rui-Rui |
| description | InAs/GaSb double quantum wells separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs
[
E
f
s
(
InAs
)
] for realizing independent electric contacts to each well. In particular, separate Ohmic contacts to the upper InAs quantum well are achieved by selectively etching down to the InAs, while contacts to the lower GaSb quantum well are obtained by the depletion method. For the latter, the upper InAs quantum well is locally pinched off by top etched trenches capped with a remaining 2–3 nm InAs layer. As a result of a relatively low
E
f
s
(
InAs
), applying a negative bias gate potential will create a conducting hole channel in GaSb and, hence, a separate Ohmic contact to the lower quantum well. This method is demonstrated with experiment and the support of a self-consistent band bending calculation. A number of experiments on separately probing Coulomb and tunnel-coupled InAs/GaSb systems now become accessible. |
| doi_str_mv | 10.1063/5.0133795 |
| format | article |
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[
E
f
s
(
InAs
)
] for realizing independent electric contacts to each well. In particular, separate Ohmic contacts to the upper InAs quantum well are achieved by selectively etching down to the InAs, while contacts to the lower GaSb quantum well are obtained by the depletion method. For the latter, the upper InAs quantum well is locally pinched off by top etched trenches capped with a remaining 2–3 nm InAs layer. As a result of a relatively low
E
f
s
(
InAs
), applying a negative bias gate potential will create a conducting hole channel in GaSb and, hence, a separate Ohmic contact to the lower quantum well. This method is demonstrated with experiment and the support of a self-consistent band bending calculation. A number of experiments on separately probing Coulomb and tunnel-coupled InAs/GaSb systems now become accessible.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0133795</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Contact resistance ; Depletion ; Electric contacts ; Epitaxial growth ; Fermi surfaces ; Gallium antimonides ; Indium arsenides ; Molecular beam epitaxy ; Nanofabrication ; Quantum wells</subject><ispartof>Applied physics letters, 2023-03, Vol.122 (12)</ispartof><rights>Author(s)</rights><rights>2023 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-7bda9aa29a8a49ad288c3d30b8d489ea7e92623f9ff3b9073921234d87b2a6e33</citedby><cites>FETCH-LOGICAL-c362t-7bda9aa29a8a49ad288c3d30b8d489ea7e92623f9ff3b9073921234d87b2a6e33</cites><orcidid>0000-0003-3751-741X ; 0000-0002-9733-2137 ; 0000-0002-9286-8688 ; 0000-0002-5561-0266 ; 0000-0001-6519-7113</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0133795$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,786,788,790,801,27957,27958,76741</link.rule.ids></links><search><creatorcontrib>Wu, Xingjun</creatorcontrib><creatorcontrib>Wang, Jianhuan</creatorcontrib><creatorcontrib>Huang, Miaoling</creatorcontrib><creatorcontrib>Yan, Shili</creatorcontrib><creatorcontrib>Du, Rui-Rui</creatorcontrib><title>Realization of independent contacts in barrier-separated InAs/GaSb quantum wells</title><title>Applied physics letters</title><description>InAs/GaSb double quantum wells separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs
[
E
f
s
(
InAs
)
] for realizing independent electric contacts to each well. In particular, separate Ohmic contacts to the upper InAs quantum well are achieved by selectively etching down to the InAs, while contacts to the lower GaSb quantum well are obtained by the depletion method. For the latter, the upper InAs quantum well is locally pinched off by top etched trenches capped with a remaining 2–3 nm InAs layer. As a result of a relatively low
E
f
s
(
InAs
), applying a negative bias gate potential will create a conducting hole channel in GaSb and, hence, a separate Ohmic contact to the lower quantum well. This method is demonstrated with experiment and the support of a self-consistent band bending calculation. A number of experiments on separately probing Coulomb and tunnel-coupled InAs/GaSb systems now become accessible.</description><subject>Applied physics</subject><subject>Contact resistance</subject><subject>Depletion</subject><subject>Electric contacts</subject><subject>Epitaxial growth</subject><subject>Fermi surfaces</subject><subject>Gallium antimonides</subject><subject>Indium arsenides</subject><subject>Molecular beam epitaxy</subject><subject>Nanofabrication</subject><subject>Quantum wells</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNqd0N9LwzAQB_AgCs7pg_9BwSeFbklubZLHMdwcDBR_PIdrk0BH13ZJquhfb3UD3325444Pd_Al5JrRCaM5TLMJZQBCZSdkxKgQKTAmT8mIUgpprjJ2Ti5C2A5jxgFG5OnZYl19YazaJmldUjXGdnYoTUzKtolYxjAskwK9r6xPg-3QY7QmWTfzMF3hS5Hse2xiv0s-bF2HS3LmsA726tjH5G15_7p4SDePq_VivklLyHlMRWFQIXKFEmcKDZeyBAO0kGYmlUVhFc85OOUcFIoKUJxxmBkpCo65BRiTm8Pdzrf73oaot23vm-Gl5kJKJRjjalC3B1X6NgRvne58tUP_qRnVP4HpTB8DG-zdwYayir-B_A-_t_4P6s44-AaMsHkd</recordid><startdate>20230320</startdate><enddate>20230320</enddate><creator>Wu, Xingjun</creator><creator>Wang, Jianhuan</creator><creator>Huang, Miaoling</creator><creator>Yan, Shili</creator><creator>Du, Rui-Rui</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-3751-741X</orcidid><orcidid>https://orcid.org/0000-0002-9733-2137</orcidid><orcidid>https://orcid.org/0000-0002-9286-8688</orcidid><orcidid>https://orcid.org/0000-0002-5561-0266</orcidid><orcidid>https://orcid.org/0000-0001-6519-7113</orcidid></search><sort><creationdate>20230320</creationdate><title>Realization of independent contacts in barrier-separated InAs/GaSb quantum wells</title><author>Wu, Xingjun ; Wang, Jianhuan ; Huang, Miaoling ; Yan, Shili ; Du, Rui-Rui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-7bda9aa29a8a49ad288c3d30b8d489ea7e92623f9ff3b9073921234d87b2a6e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Applied physics</topic><topic>Contact resistance</topic><topic>Depletion</topic><topic>Electric contacts</topic><topic>Epitaxial growth</topic><topic>Fermi surfaces</topic><topic>Gallium antimonides</topic><topic>Indium arsenides</topic><topic>Molecular beam epitaxy</topic><topic>Nanofabrication</topic><topic>Quantum wells</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Xingjun</creatorcontrib><creatorcontrib>Wang, Jianhuan</creatorcontrib><creatorcontrib>Huang, Miaoling</creatorcontrib><creatorcontrib>Yan, Shili</creatorcontrib><creatorcontrib>Du, Rui-Rui</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Xingjun</au><au>Wang, Jianhuan</au><au>Huang, Miaoling</au><au>Yan, Shili</au><au>Du, Rui-Rui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Realization of independent contacts in barrier-separated InAs/GaSb quantum wells</atitle><jtitle>Applied physics letters</jtitle><date>2023-03-20</date><risdate>2023</risdate><volume>122</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>InAs/GaSb double quantum wells separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs
[
E
f
s
(
InAs
)
] for realizing independent electric contacts to each well. In particular, separate Ohmic contacts to the upper InAs quantum well are achieved by selectively etching down to the InAs, while contacts to the lower GaSb quantum well are obtained by the depletion method. For the latter, the upper InAs quantum well is locally pinched off by top etched trenches capped with a remaining 2–3 nm InAs layer. As a result of a relatively low
E
f
s
(
InAs
), applying a negative bias gate potential will create a conducting hole channel in GaSb and, hence, a separate Ohmic contact to the lower quantum well. This method is demonstrated with experiment and the support of a self-consistent band bending calculation. A number of experiments on separately probing Coulomb and tunnel-coupled InAs/GaSb systems now become accessible.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0133795</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-3751-741X</orcidid><orcidid>https://orcid.org/0000-0002-9733-2137</orcidid><orcidid>https://orcid.org/0000-0002-9286-8688</orcidid><orcidid>https://orcid.org/0000-0002-5561-0266</orcidid><orcidid>https://orcid.org/0000-0001-6519-7113</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2023-03, Vol.122 (12) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_scitation_primary_10_1063_5_0133795 |
| source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | Applied physics Contact resistance Depletion Electric contacts Epitaxial growth Fermi surfaces Gallium antimonides Indium arsenides Molecular beam epitaxy Nanofabrication Quantum wells |
| title | Realization of independent contacts in barrier-separated InAs/GaSb quantum wells |
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