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Incorporation of cobalt ions into magnetoelectric gallium ferrite epitaxial films: tuning of conductivity and magnetizationElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra03609g

Thin films of Ga 0.6 Fe 1.4 O 3 show ferrimagnetism with a transition temperature at around 360 K but suffer from large charge conduction. Substituting Fe 2+ with non-magnetic Mg 2+ ions reduces the charge conduction but also lowers the magnetic transition temperature. Doping Ga 0.6 Fe 1.4 O 3 thin...

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Main Authors: Oh, S. H, Shin, R. H, Lefèvre, C, Thomasson, A, Roulland, F, Shin, Y, Kim, D.-H, Kim, J.-Y, Demchenko, A, Leuvrey, C, Mény, C, Jo, W, Viart, N
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creator Oh, S. H
Shin, R. H
Lefèvre, C
Thomasson, A
Roulland, F
Shin, Y
Kim, D.-H
Kim, J.-Y
Demchenko, A
Leuvrey, C
Mény, C
Jo, W
Viart, N
description Thin films of Ga 0.6 Fe 1.4 O 3 show ferrimagnetism with a transition temperature at around 360 K but suffer from large charge conduction. Substituting Fe 2+ with non-magnetic Mg 2+ ions reduces the charge conduction but also lowers the magnetic transition temperature. Doping Ga 0.6 Fe 1.4 O 3 thin films with magnetic Co 2+ ions leads to a similar reduction in the charge conduction, which is significant by two orders of magnitude, and, on the other hand, does not lead to any modification of the ferrimagnetic transition. The remnant magnetization of the leakage currents free Co-doped Ga 0.6 Fe 1.4 O 3 thin films is of 53 emu cm −3 at 300 K. These films, therefore, are promising materials with potential uses in magnetoelectric and multiferroic devices. Doping Ga0.6Fe1.4O3 thin films with magnetic Co 2+ ions leads to a strong reduction in the charge conduction and does not lead to any modification of the ferrimagnetic transition. This is absolutely comparable to that observed with Mg-doping.
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title Incorporation of cobalt ions into magnetoelectric gallium ferrite epitaxial films: tuning of conductivity and magnetizationElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra03609g
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