One-dimensional silicon and germanium nanostructures with no carbon analoguesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03708a

In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their correspo...

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Main Authors: Perim, E, Paupitz, R, Botari, T, Galvao, D. S
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Galvao, D. S
description In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures. DFT calculations predict silicon and germanium nanostructures with no carbon analogues. These structures show promising mechanical and electronic properties.
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fullrecord <record><control><sourceid>rsc</sourceid><recordid>TN_cdi_rsc_primary_c4cp03708a</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>c4cp03708a</sourcerecordid><originalsourceid>FETCH-rsc_primary_c4cp03708a3</originalsourceid><addsrcrecordid>eNqFj71LA0EUxBdRMEYbe-HZaXFxlz3zYasnpkoR--Nl711c2Xt77IfiP-Pf6hFEC8FUMzDDbxghzpWcKKkXN6Y0vdQzOccDMVLlVBcLOS8Pf_xseixOYnyVUqpbpUfic8VUNLYjjtYzOojWWeMZkBvYUuiQbe6AkX1MIZuUA0V4t-kF2IPBsNl10fltplg5Mil4tgZi7ntHAzdh-ADLrR9YadiAq2q9vAZ8Q-tw42gCayJ4WC3v4O-LU3HUoot09q1jcfFYPd8_FSGaug-2G-D1b13vzy__y-u-afUXjuZnEw</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>One-dimensional silicon and germanium nanostructures with no carbon analoguesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03708a</title><source>Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list)</source><creator>Perim, E ; Paupitz, R ; Botari, T ; Galvao, D. S</creator><creatorcontrib>Perim, E ; Paupitz, R ; Botari, T ; Galvao, D. S</creatorcontrib><description>In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures. DFT calculations predict silicon and germanium nanostructures with no carbon analogues. These structures show promising mechanical and electronic properties.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/c4cp03708a</identifier><language>eng</language><creationdate>2014-10</creationdate><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Perim, E</creatorcontrib><creatorcontrib>Paupitz, R</creatorcontrib><creatorcontrib>Botari, T</creatorcontrib><creatorcontrib>Galvao, D. S</creatorcontrib><title>One-dimensional silicon and germanium nanostructures with no carbon analoguesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03708a</title><description>In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures. DFT calculations predict silicon and germanium nanostructures with no carbon analogues. These structures show promising mechanical and electronic properties.</description><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFj71LA0EUxBdRMEYbe-HZaXFxlz3zYasnpkoR--Nl711c2Xt77IfiP-Pf6hFEC8FUMzDDbxghzpWcKKkXN6Y0vdQzOccDMVLlVBcLOS8Pf_xseixOYnyVUqpbpUfic8VUNLYjjtYzOojWWeMZkBvYUuiQbe6AkX1MIZuUA0V4t-kF2IPBsNl10fltplg5Mil4tgZi7ntHAzdh-ADLrR9YadiAq2q9vAZ8Q-tw42gCayJ4WC3v4O-LU3HUoot09q1jcfFYPd8_FSGaug-2G-D1b13vzy__y-u-afUXjuZnEw</recordid><startdate>20141021</startdate><enddate>20141021</enddate><creator>Perim, E</creator><creator>Paupitz, R</creator><creator>Botari, T</creator><creator>Galvao, D. S</creator><scope/></search><sort><creationdate>20141021</creationdate><title>One-dimensional silicon and germanium nanostructures with no carbon analoguesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03708a</title><author>Perim, E ; Paupitz, R ; Botari, T ; Galvao, D. S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_c4cp03708a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Perim, E</creatorcontrib><creatorcontrib>Paupitz, R</creatorcontrib><creatorcontrib>Botari, T</creatorcontrib><creatorcontrib>Galvao, D. S</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Perim, E</au><au>Paupitz, R</au><au>Botari, T</au><au>Galvao, D. S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>One-dimensional silicon and germanium nanostructures with no carbon analoguesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03708a</atitle><date>2014-10-21</date><risdate>2014</risdate><volume>16</volume><issue>44</issue><spage>2457</spage><epage>24574</epage><pages>2457-24574</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><notes>10.1039/c4cp03708a</notes><notes>Electronic supplementary information (ESI) available. See DOI</notes><abstract>In this work we report new silicon and germanium tubular nanostructures with no corresponding stable carbon analogues. The electronic and mechanical properties of these new tubes were investigated through ab initio methods. Our results show that these structures have lower energy than their corresponding nanoribbon structures and are stable up to high temperatures (500 and 1000 K, for silicon and germanium tubes, respectively). Both tubes are semiconducting with small indirect band gaps, which can be significantly altered by both compressive and tensile strains. Large bandgap variations of almost 50% were observed for strain rates as small as 3%, suggesting their possible applications in sensor devices. They also present high Young's modulus values (0.25 and 0.15 TPa, respectively). TEM images were simulated to help in the identification of these new structures. DFT calculations predict silicon and germanium nanostructures with no carbon analogues. These structures show promising mechanical and electronic properties.</abstract><doi>10.1039/c4cp03708a</doi><tpages>5</tpages></addata></record>
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title One-dimensional silicon and germanium nanostructures with no carbon analoguesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03708a
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-21T20%3A35%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-rsc&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=One-dimensional%20silicon%20and%20germanium%20nanostructures%20with%20no%20carbon%20analoguesElectronic%20supplementary%20information%20(ESI)%20available.%20See%20DOI:%2010.1039/c4cp03708a&rft.au=Perim,%20E&rft.date=2014-10-21&rft.volume=16&rft.issue=44&rft.spage=2457&rft.epage=24574&rft.pages=2457-24574&rft.issn=1463-9076&rft.eissn=1463-9084&rft_id=info:doi/10.1039/c4cp03708a&rft_dat=%3Crsc%3Ec4cp03708a%3C/rsc%3E%3Cgrp_id%3Ecdi_FETCH-rsc_primary_c4cp03708a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true