Loading…
Monolayer Contact Doping from a Silicon Oxide Source Substrate
Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven in...
Saved in:
Published in: | Langmuir 2017-04, Vol.33 (15), p.3635-3638 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103 |
---|---|
cites | cdi_FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103 |
container_end_page | 3638 |
container_issue | 15 |
container_start_page | 3635 |
container_title | Langmuir |
container_volume | 33 |
creator | Ye, Liang González-Campo, Arántzazu Kudernac, Tibor Núñez, Rosario de Jong, Michel van der Wiel, Wilfred G Huskens, Jurriaan |
description | Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which we replace the commonly used Si source substrate by a thermally oxidized substrate with a 100 nm thick silicon oxide layer, functionalized with a monolayer of a dopant-containing silane. The thermal oxide potentially provides a better capping effect and effectively prevents the dopants from diffusing back into the source substrate. The use of easily accessible and processable silane monolayers provides access to a general and modifiable process for the introduction of dopants on the source substrate. As a proof of concept, a boron-rich carboranyl-alkoxysilane was used here to construct the monolayer that delivers the dopant, to boost the doping level in the target substrate. X-ray photoelectron spectroscopy (XPS) showed a successful grafting of the dopant adsorbate onto the SiO2 surface. The achieved doping levels after thermal annealing were similar to the doping levels acessible by MLD as demonstrated by secondary ion mass spectrometry measurements. The method shows good prospects, e.g. for use in the doping of Si nanostructures. |
doi_str_mv | 10.1021/acs.langmuir.7b00157 |
format | article |
fullrecord | <record><control><sourceid>acs_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5397885</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>d136485170</sourcerecordid><originalsourceid>FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103</originalsourceid><addsrcrecordid>eNp9kMlOwzAURS0EoqXwBwjlB1I8xs6mEiqjVNRFYW05jlNcJXblJKj9e1x1EGxY3cV7517pAHCL4BhBjO6Vbse1csumt2HMCwgR42dgiBiGKROYn4Mh5JSknGZkAK7adgUhzAnNL8EAC8IQInwIJu_e-VptTUim3nVKd8mjX1u3TKrgm0QlC1tb7V0y39jSJAvfBx2jL9ouqM5cg4tK1a25OeQIfD4_fUxf09n85W36MEsVFVmXapGZjBQKmzKn1BDNjCkwEaQoSwYzkzNNqEaMmpJoTFElMKRFxqmGBHMEyQhM9r3rvmhMqY2L87VcB9uosJVeWfn34uyXXPpvyUjOhWCxgO4LdPBtG0x1YhGUO58y-pRHn_LgM2J3v3dP0FFgfID7hx2-inZc1PB_5w-bYIZf</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Monolayer Contact Doping from a Silicon Oxide Source Substrate</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)</source><creator>Ye, Liang ; González-Campo, Arántzazu ; Kudernac, Tibor ; Núñez, Rosario ; de Jong, Michel ; van der Wiel, Wilfred G ; Huskens, Jurriaan</creator><creatorcontrib>Ye, Liang ; González-Campo, Arántzazu ; Kudernac, Tibor ; Núñez, Rosario ; de Jong, Michel ; van der Wiel, Wilfred G ; Huskens, Jurriaan</creatorcontrib><description>Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which we replace the commonly used Si source substrate by a thermally oxidized substrate with a 100 nm thick silicon oxide layer, functionalized with a monolayer of a dopant-containing silane. The thermal oxide potentially provides a better capping effect and effectively prevents the dopants from diffusing back into the source substrate. The use of easily accessible and processable silane monolayers provides access to a general and modifiable process for the introduction of dopants on the source substrate. As a proof of concept, a boron-rich carboranyl-alkoxysilane was used here to construct the monolayer that delivers the dopant, to boost the doping level in the target substrate. X-ray photoelectron spectroscopy (XPS) showed a successful grafting of the dopant adsorbate onto the SiO2 surface. The achieved doping levels after thermal annealing were similar to the doping levels acessible by MLD as demonstrated by secondary ion mass spectrometry measurements. The method shows good prospects, e.g. for use in the doping of Si nanostructures.</description><identifier>ISSN: 0743-7463</identifier><identifier>EISSN: 1520-5827</identifier><identifier>DOI: 10.1021/acs.langmuir.7b00157</identifier><identifier>PMID: 28351137</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>Langmuir, 2017-04, Vol.33 (15), p.3635-3638</ispartof><rights>Copyright © 2017 American Chemical Society</rights><rights>Copyright © 2017 American Chemical Society 2017 American Chemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103</citedby><cites>FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103</cites><orcidid>0000-0002-4596-9179 ; 0000-0003-4582-5148</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,786,790,891,27957,27958</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/28351137$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Ye, Liang</creatorcontrib><creatorcontrib>González-Campo, Arántzazu</creatorcontrib><creatorcontrib>Kudernac, Tibor</creatorcontrib><creatorcontrib>Núñez, Rosario</creatorcontrib><creatorcontrib>de Jong, Michel</creatorcontrib><creatorcontrib>van der Wiel, Wilfred G</creatorcontrib><creatorcontrib>Huskens, Jurriaan</creatorcontrib><title>Monolayer Contact Doping from a Silicon Oxide Source Substrate</title><title>Langmuir</title><addtitle>Langmuir</addtitle><description>Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which we replace the commonly used Si source substrate by a thermally oxidized substrate with a 100 nm thick silicon oxide layer, functionalized with a monolayer of a dopant-containing silane. The thermal oxide potentially provides a better capping effect and effectively prevents the dopants from diffusing back into the source substrate. The use of easily accessible and processable silane monolayers provides access to a general and modifiable process for the introduction of dopants on the source substrate. As a proof of concept, a boron-rich carboranyl-alkoxysilane was used here to construct the monolayer that delivers the dopant, to boost the doping level in the target substrate. X-ray photoelectron spectroscopy (XPS) showed a successful grafting of the dopant adsorbate onto the SiO2 surface. The achieved doping levels after thermal annealing were similar to the doping levels acessible by MLD as demonstrated by secondary ion mass spectrometry measurements. The method shows good prospects, e.g. for use in the doping of Si nanostructures.</description><issn>0743-7463</issn><issn>1520-5827</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9kMlOwzAURS0EoqXwBwjlB1I8xs6mEiqjVNRFYW05jlNcJXblJKj9e1x1EGxY3cV7517pAHCL4BhBjO6Vbse1csumt2HMCwgR42dgiBiGKROYn4Mh5JSknGZkAK7adgUhzAnNL8EAC8IQInwIJu_e-VptTUim3nVKd8mjX1u3TKrgm0QlC1tb7V0y39jSJAvfBx2jL9ouqM5cg4tK1a25OeQIfD4_fUxf09n85W36MEsVFVmXapGZjBQKmzKn1BDNjCkwEaQoSwYzkzNNqEaMmpJoTFElMKRFxqmGBHMEyQhM9r3rvmhMqY2L87VcB9uosJVeWfn34uyXXPpvyUjOhWCxgO4LdPBtG0x1YhGUO58y-pRHn_LgM2J3v3dP0FFgfID7hx2-inZc1PB_5w-bYIZf</recordid><startdate>20170418</startdate><enddate>20170418</enddate><creator>Ye, Liang</creator><creator>González-Campo, Arántzazu</creator><creator>Kudernac, Tibor</creator><creator>Núñez, Rosario</creator><creator>de Jong, Michel</creator><creator>van der Wiel, Wilfred G</creator><creator>Huskens, Jurriaan</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-4596-9179</orcidid><orcidid>https://orcid.org/0000-0003-4582-5148</orcidid></search><sort><creationdate>20170418</creationdate><title>Monolayer Contact Doping from a Silicon Oxide Source Substrate</title><author>Ye, Liang ; González-Campo, Arántzazu ; Kudernac, Tibor ; Núñez, Rosario ; de Jong, Michel ; van der Wiel, Wilfred G ; Huskens, Jurriaan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ye, Liang</creatorcontrib><creatorcontrib>González-Campo, Arántzazu</creatorcontrib><creatorcontrib>Kudernac, Tibor</creatorcontrib><creatorcontrib>Núñez, Rosario</creatorcontrib><creatorcontrib>de Jong, Michel</creatorcontrib><creatorcontrib>van der Wiel, Wilfred G</creatorcontrib><creatorcontrib>Huskens, Jurriaan</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Langmuir</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ye, Liang</au><au>González-Campo, Arántzazu</au><au>Kudernac, Tibor</au><au>Núñez, Rosario</au><au>de Jong, Michel</au><au>van der Wiel, Wilfred G</au><au>Huskens, Jurriaan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolayer Contact Doping from a Silicon Oxide Source Substrate</atitle><jtitle>Langmuir</jtitle><addtitle>Langmuir</addtitle><date>2017-04-18</date><risdate>2017</risdate><volume>33</volume><issue>15</issue><spage>3635</spage><epage>3638</epage><pages>3635-3638</pages><issn>0743-7463</issn><eissn>1520-5827</eissn><abstract>Monolayer contact doping (MLCD) is a modification of the monolayer doping (MLD) technique that involves monolayer formation of a dopant-containing adsorbate on a source substrate. This source substrate is subsequently brought into contact with the target substrate, upon which the dopant is driven into the target substrate by thermal annealing. Here, we report a modified MLCD process, in which we replace the commonly used Si source substrate by a thermally oxidized substrate with a 100 nm thick silicon oxide layer, functionalized with a monolayer of a dopant-containing silane. The thermal oxide potentially provides a better capping effect and effectively prevents the dopants from diffusing back into the source substrate. The use of easily accessible and processable silane monolayers provides access to a general and modifiable process for the introduction of dopants on the source substrate. As a proof of concept, a boron-rich carboranyl-alkoxysilane was used here to construct the monolayer that delivers the dopant, to boost the doping level in the target substrate. X-ray photoelectron spectroscopy (XPS) showed a successful grafting of the dopant adsorbate onto the SiO2 surface. The achieved doping levels after thermal annealing were similar to the doping levels acessible by MLD as demonstrated by secondary ion mass spectrometry measurements. The method shows good prospects, e.g. for use in the doping of Si nanostructures.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>28351137</pmid><doi>10.1021/acs.langmuir.7b00157</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-4596-9179</orcidid><orcidid>https://orcid.org/0000-0003-4582-5148</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0743-7463 |
ispartof | Langmuir, 2017-04, Vol.33 (15), p.3635-3638 |
issn | 0743-7463 1520-5827 |
language | eng |
recordid | cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_5397885 |
source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
title | Monolayer Contact Doping from a Silicon Oxide Source Substrate |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T18%3A19%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Monolayer%20Contact%20Doping%20from%20a%20Silicon%20Oxide%20Source%20Substrate&rft.jtitle=Langmuir&rft.au=Ye,%20Liang&rft.date=2017-04-18&rft.volume=33&rft.issue=15&rft.spage=3635&rft.epage=3638&rft.pages=3635-3638&rft.issn=0743-7463&rft.eissn=1520-5827&rft_id=info:doi/10.1021/acs.langmuir.7b00157&rft_dat=%3Cacs_pubme%3Ed136485170%3C/acs_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a486t-c86e63ba2ed944e3c5eeb2383bdd506e95c34c154ed3c241f8204b674c0327103%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/28351137&rfr_iscdi=true |