Loading…

Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors

Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizin...

Full description

Saved in:
Bibliographic Details
Published in:Advanced functional materials 2011-11, Vol.21 (22), p.4314-4319
Main Authors: Tremblay, Noah J., Jung, Byung Jun, Breysse, Patrick, Katz, Howard E.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3
cites cdi_FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3
container_end_page 4319
container_issue 22
container_start_page 4314
container_title Advanced functional materials
container_volume 21
creator Tremblay, Noah J.
Jung, Byung Jun
Breysse, Patrick
Katz, Howard E.
description Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.
doi_str_mv 10.1002/adfm.201101324
format article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3676732</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1031294554</sourcerecordid><originalsourceid>FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</originalsourceid><addsrcrecordid>eNqFkUtv1DAURi0EoqWwZYm8ZJPBj8RJNkijvqWWVkyBio11Y98EQ-IMdmbK_PtmNG1UVl3Z0j3fp2sfQt5zNuOMiU9g624mGOeMS5G-IPtccZVIJoqX053f7pE3Mf5mjOe5TF-TPSHzLC1VuU9-HrnGDdAm536NYcBA553zSBfoo_MNXTugi43H0Lg4OEO_Ylz2PmKk1YZ6Ct7SJb0KDfhxuMDOmd7blRn6EN-SVzW0Ed89nAfk28nxzeFZcnF1en44v0hMxnmaVKwCK2sFCKVCg7yqykxJUYlSWCklA8sKsOO6kksoWFqPdIFGZbZQkII8IJ93vctV1aE16IcArV4G10HY6B6c_n_i3S_d9GstVa5yKcaCjw8Fof-7wjjozkWDbQse-1XUvBAqywsl0-dRJrko0yzborMdakIfY8B62ogzvXWnt-705G4MfHj6jgl_lDUC5Q64cy1unqnT86OTy6flyS47asR_UxbCHz3-QZ7pH19O9fVCFfz25ruW8h51iLaj</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1031294554</pqid></control><display><type>article</type><title>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</title><source>Wiley-Blackwell Journals</source><creator>Tremblay, Noah J. ; Jung, Byung Jun ; Breysse, Patrick ; Katz, Howard E.</creator><creatorcontrib>Tremblay, Noah J. ; Jung, Byung Jun ; Breysse, Patrick ; Katz, Howard E.</creatorcontrib><description>Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.</description><identifier>ISSN: 1616-301X</identifier><identifier>ISSN: 1616-3028</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.201101324</identifier><identifier>PMID: 23754969</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Amines ; Analog to digital converters ; Circuits ; Detection ; Digital ; organic field-emission transistors (OFETs) ; Organic semiconductors ; Platforms ; Semiconductors ; sensors</subject><ispartof>Advanced functional materials, 2011-11, Vol.21 (22), p.4314-4319</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</citedby><cites>FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadfm.201101324$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadfm.201101324$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,315,786,790,891,27957,27958,50923,51032</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23754969$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Tremblay, Noah J.</creatorcontrib><creatorcontrib>Jung, Byung Jun</creatorcontrib><creatorcontrib>Breysse, Patrick</creatorcontrib><creatorcontrib>Katz, Howard E.</creatorcontrib><title>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</title><title>Advanced functional materials</title><addtitle>Adv. Funct. Mater</addtitle><description>Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.</description><subject>Amines</subject><subject>Analog to digital converters</subject><subject>Circuits</subject><subject>Detection</subject><subject>Digital</subject><subject>organic field-emission transistors (OFETs)</subject><subject>Organic semiconductors</subject><subject>Platforms</subject><subject>Semiconductors</subject><subject>sensors</subject><issn>1616-301X</issn><issn>1616-3028</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkUtv1DAURi0EoqWwZYm8ZJPBj8RJNkijvqWWVkyBio11Y98EQ-IMdmbK_PtmNG1UVl3Z0j3fp2sfQt5zNuOMiU9g624mGOeMS5G-IPtccZVIJoqX053f7pE3Mf5mjOe5TF-TPSHzLC1VuU9-HrnGDdAm536NYcBA553zSBfoo_MNXTugi43H0Lg4OEO_Ylz2PmKk1YZ6Ct7SJb0KDfhxuMDOmd7blRn6EN-SVzW0Ed89nAfk28nxzeFZcnF1en44v0hMxnmaVKwCK2sFCKVCg7yqykxJUYlSWCklA8sKsOO6kksoWFqPdIFGZbZQkII8IJ93vctV1aE16IcArV4G10HY6B6c_n_i3S_d9GstVa5yKcaCjw8Fof-7wjjozkWDbQse-1XUvBAqywsl0-dRJrko0yzborMdakIfY8B62ogzvXWnt-705G4MfHj6jgl_lDUC5Q64cy1unqnT86OTy6flyS47asR_UxbCHz3-QZ7pH19O9fVCFfz25ruW8h51iLaj</recordid><startdate>20111122</startdate><enddate>20111122</enddate><creator>Tremblay, Noah J.</creator><creator>Jung, Byung Jun</creator><creator>Breysse, Patrick</creator><creator>Katz, Howard E.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20111122</creationdate><title>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</title><author>Tremblay, Noah J. ; Jung, Byung Jun ; Breysse, Patrick ; Katz, Howard E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amines</topic><topic>Analog to digital converters</topic><topic>Circuits</topic><topic>Detection</topic><topic>Digital</topic><topic>organic field-emission transistors (OFETs)</topic><topic>Organic semiconductors</topic><topic>Platforms</topic><topic>Semiconductors</topic><topic>sensors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tremblay, Noah J.</creatorcontrib><creatorcontrib>Jung, Byung Jun</creatorcontrib><creatorcontrib>Breysse, Patrick</creatorcontrib><creatorcontrib>Katz, Howard E.</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tremblay, Noah J.</au><au>Jung, Byung Jun</au><au>Breysse, Patrick</au><au>Katz, Howard E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</atitle><jtitle>Advanced functional materials</jtitle><addtitle>Adv. Funct. Mater</addtitle><date>2011-11-22</date><risdate>2011</risdate><volume>21</volume><issue>22</issue><spage>4314</spage><epage>4319</epage><pages>4314-4319</pages><issn>1616-301X</issn><issn>1616-3028</issn><eissn>1616-3028</eissn><notes>istex:18C35DD15A8F7EC227DB5424A4B075A4BC865C9D</notes><notes>ArticleID:ADFM201101324</notes><notes>ark:/67375/WNG-PS681XTV-3</notes><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><notes>ObjectType-Article-1</notes><notes>ObjectType-Feature-2</notes><abstract>Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>23754969</pmid><doi>10.1002/adfm.201101324</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1616-301X
ispartof Advanced functional materials, 2011-11, Vol.21 (22), p.4314-4319
issn 1616-301X
1616-3028
1616-3028
language eng
recordid cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3676732
source Wiley-Blackwell Journals
subjects Amines
Analog to digital converters
Circuits
Detection
Digital
organic field-emission transistors (OFETs)
Organic semiconductors
Platforms
Semiconductors
sensors
title Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-21T19%3A42%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Digital-Inverter%20Amine%20Sensing%20via%20Synergistic%20Responses%20by%20n%20and%20p%20Organic%20Semiconductors&rft.jtitle=Advanced%20functional%20materials&rft.au=Tremblay,%20Noah%20J.&rft.date=2011-11-22&rft.volume=21&rft.issue=22&rft.spage=4314&rft.epage=4319&rft.pages=4314-4319&rft.issn=1616-301X&rft.eissn=1616-3028&rft_id=info:doi/10.1002/adfm.201101324&rft_dat=%3Cproquest_pubme%3E1031294554%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1031294554&rft_id=info:pmid/23754969&rfr_iscdi=true