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Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors
Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizin...
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Published in: | Advanced functional materials 2011-11, Vol.21 (22), p.4314-4319 |
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creator | Tremblay, Noah J. Jung, Byung Jun Breysse, Patrick Katz, Howard E. |
description | Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.
Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. |
doi_str_mv | 10.1002/adfm.201101324 |
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Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.</description><identifier>ISSN: 1616-301X</identifier><identifier>ISSN: 1616-3028</identifier><identifier>EISSN: 1616-3028</identifier><identifier>DOI: 10.1002/adfm.201101324</identifier><identifier>PMID: 23754969</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>Amines ; Analog to digital converters ; Circuits ; Detection ; Digital ; organic field-emission transistors (OFETs) ; Organic semiconductors ; Platforms ; Semiconductors ; sensors</subject><ispartof>Advanced functional materials, 2011-11, Vol.21 (22), p.4314-4319</ispartof><rights>Copyright © 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</citedby><cites>FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadfm.201101324$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadfm.201101324$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,315,786,790,891,27957,27958,50923,51032</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23754969$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Tremblay, Noah J.</creatorcontrib><creatorcontrib>Jung, Byung Jun</creatorcontrib><creatorcontrib>Breysse, Patrick</creatorcontrib><creatorcontrib>Katz, Howard E.</creatorcontrib><title>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</title><title>Advanced functional materials</title><addtitle>Adv. Funct. Mater</addtitle><description>Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.
Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.</description><subject>Amines</subject><subject>Analog to digital converters</subject><subject>Circuits</subject><subject>Detection</subject><subject>Digital</subject><subject>organic field-emission transistors (OFETs)</subject><subject>Organic semiconductors</subject><subject>Platforms</subject><subject>Semiconductors</subject><subject>sensors</subject><issn>1616-301X</issn><issn>1616-3028</issn><issn>1616-3028</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkUtv1DAURi0EoqWwZYm8ZJPBj8RJNkijvqWWVkyBio11Y98EQ-IMdmbK_PtmNG1UVl3Z0j3fp2sfQt5zNuOMiU9g624mGOeMS5G-IPtccZVIJoqX053f7pE3Mf5mjOe5TF-TPSHzLC1VuU9-HrnGDdAm536NYcBA553zSBfoo_MNXTugi43H0Lg4OEO_Ylz2PmKk1YZ6Ct7SJb0KDfhxuMDOmd7blRn6EN-SVzW0Ed89nAfk28nxzeFZcnF1en44v0hMxnmaVKwCK2sFCKVCg7yqykxJUYlSWCklA8sKsOO6kksoWFqPdIFGZbZQkII8IJ93vctV1aE16IcArV4G10HY6B6c_n_i3S_d9GstVa5yKcaCjw8Fof-7wjjozkWDbQse-1XUvBAqywsl0-dRJrko0yzborMdakIfY8B62ogzvXWnt-705G4MfHj6jgl_lDUC5Q64cy1unqnT86OTy6flyS47asR_UxbCHz3-QZ7pH19O9fVCFfz25ruW8h51iLaj</recordid><startdate>20111122</startdate><enddate>20111122</enddate><creator>Tremblay, Noah J.</creator><creator>Jung, Byung Jun</creator><creator>Breysse, Patrick</creator><creator>Katz, Howard E.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20111122</creationdate><title>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</title><author>Tremblay, Noah J. ; Jung, Byung Jun ; Breysse, Patrick ; Katz, Howard E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5114-b0bad3f6aea96ece1bb95632b292d3330ad08ad496313a804fd3f8ec65d86a4a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Amines</topic><topic>Analog to digital converters</topic><topic>Circuits</topic><topic>Detection</topic><topic>Digital</topic><topic>organic field-emission transistors (OFETs)</topic><topic>Organic semiconductors</topic><topic>Platforms</topic><topic>Semiconductors</topic><topic>sensors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tremblay, Noah J.</creatorcontrib><creatorcontrib>Jung, Byung Jun</creatorcontrib><creatorcontrib>Breysse, Patrick</creatorcontrib><creatorcontrib>Katz, Howard E.</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Advanced functional materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tremblay, Noah J.</au><au>Jung, Byung Jun</au><au>Breysse, Patrick</au><au>Katz, Howard E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors</atitle><jtitle>Advanced functional materials</jtitle><addtitle>Adv. Funct. Mater</addtitle><date>2011-11-22</date><risdate>2011</risdate><volume>21</volume><issue>22</issue><spage>4314</spage><epage>4319</epage><pages>4314-4319</pages><issn>1616-301X</issn><issn>1616-3028</issn><eissn>1616-3028</eissn><notes>istex:18C35DD15A8F7EC227DB5424A4B075A4BC865C9D</notes><notes>ArticleID:ADFM201101324</notes><notes>ark:/67375/WNG-PS681XTV-3</notes><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><notes>ObjectType-Article-1</notes><notes>ObjectType-Feature-2</notes><abstract>Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.
Higher‐order logic circuits utilizing organic field‐effect transistors (OFETs) sensitive to amine vapors are presented The circuits utilize synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards sensors that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>23754969</pmid><doi>10.1002/adfm.201101324</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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source | Wiley-Blackwell Journals |
subjects | Amines Analog to digital converters Circuits Detection Digital organic field-emission transistors (OFETs) Organic semiconductors Platforms Semiconductors sensors |
title | Digital-Inverter Amine Sensing via Synergistic Responses by n and p Organic Semiconductors |
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