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Investigation of energy band at atomic layer deposited AZO/β-Ga 2 O 3 ([Formula: see text]) heterojunctions
The Al-doped effects on the band offsets of ZnO/β-Ga O interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost l...
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| Published in: | Nanoscale research letters 2019-08, Vol.14 (1), p.275 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| container_start_page | 275 |
| container_title | Nanoscale research letters |
| container_volume | 14 |
| creator | Sun, Shun-Ming Liu, Wen-Jun Golosov, Dmitriy Anatolyevich Gu, Chen-Jie Ding, Shi-Jin |
| description | The Al-doped effects on the band offsets of ZnO/β-Ga
O
interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga
O
heterojunction and the AZO/β-Ga
O
interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level. |
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O
interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga
O
heterojunction and the AZO/β-Ga
O
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O
interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga
O
heterojunction and the AZO/β-Ga
O
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O
interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga
O
heterojunction and the AZO/β-Ga
O
interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level.</abstract><cop>United States</cop><pmid>31414235</pmid><orcidid>https://orcid.org/0000-0003-4217-8838</orcidid></addata></record> |
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| identifier | ISSN: 1931-7573 |
| ispartof | Nanoscale research letters, 2019-08, Vol.14 (1), p.275 |
| issn | 1931-7573 1556-276X |
| language | eng |
| recordid | cdi_pubmed_primary_31414235 |
| source | Publicly Available Content Database; PubMed Central |
| title | Investigation of energy band at atomic layer deposited AZO/β-Ga 2 O 3 ([Formula: see text]) heterojunctions |
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