Investigation of energy band at atomic layer deposited AZO/β-Ga 2 O 3 ([Formula: see text]) heterojunctions

The Al-doped effects on the band offsets of ZnO/β-Ga O interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost l...

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Bibliographic Details
Published in:Nanoscale research letters 2019-08, Vol.14 (1), p.275
Main Authors: Sun, Shun-Ming, Liu, Wen-Jun, Golosov, Dmitriy Anatolyevich, Gu, Chen-Jie, Ding, Shi-Jin
Format: Article
Language:English
Online Access:Get full text
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Summary:The Al-doped effects on the band offsets of ZnO/β-Ga O interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce from 0.06 to - 0.42 eV, exhibiting an almost linear dependence with respect to the Al doping ratio varying from 0 to 10%. Consequently, a type-I band alignment forms at the interface of ZnO/β-Ga O heterojunction and the AZO/β-Ga O interface has a type-II band alignment. This is because incorporating Al into the ZnO would open up the band gaps due to the strong Al and O electron mixing, and the conduction and valence band edges consequently shift toward the lower level.
ISSN:1931-7573
1556-276X