Numerical analysis of deep-trap behaviors on retention time distribution of DRAMs with negative wordline bias

The data retention time characteristics of the DRAM cell with the negative wordline bias are investigated. With the unique characteristics shown in the gate-induced drain leakage current and the data retention time distribution of the 256-Mb DRAM chip, a model for the sensitivity of data retention t...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-04, Vol.52 (4), p.554-560
Main Authors: Jeong-Hyong Yi, Sung-Kye Park, Park, Y.-J., Hong Shick Min
Format: Article
Language:English
Subjects:
Activation energy
Applied sciences
Bias
Charge carrier lifetime
Computer simulation
Design. Technologies. Operation analysis. Testing
Devices
DRAM chips
Dynamic random access memory
Electric fields
Electronics
Exact sciences and technology
Fermi surfaces
gate-induced drain leakage (GIDL)
Integrated circuits
Integrated circuits by function (including memories and processors)
Leakage current
Leakage currents
Mathematical models
negative wordline
Numerical analysis
Random access memory
retention time
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Studies
tail distribution
Transistors
trap-assisted tunneling (TAT)
Tunneling
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Summary:The data retention time characteristics of the DRAM cell with the negative wordline bias are investigated. With the unique characteristics shown in the gate-induced drain leakage current and the data retention time distribution of the 256-Mb DRAM chip, a model for the sensitivity of data retention time to gate bias is proposed. With the help of two-dimensional device simulation, we found that the relative trap energy (/spl Delta/E/sub t/) of the trap energy to intrinsic Fermi energy plays a key role to determine the retention time of a DRAM cell transistor for the weak cell as well as the normal cell. Also, it is shown the localized trap in the specific region having large electric field is responsible for abnormally large leakage current of the weak cell. An analytic formula for activation energy for the weak cell and the normal cell are also proposed to estimate trap energy level in real device.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.845151