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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed. This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diamete...
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Published in: | Nanotechnology 2010-01, Vol.21 (1), p.015602-015602 |
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creator | Koester, R Hwang, J S Durand, C Le Si Dang, D Eymery, J |
description | A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed. This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diameters and a large length/diameter ratio (>100) on c-plane sapphire substrate. Detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth. In particular, the duration of the SiN(x) deposition prior to the wire growth is critical for controlling the epitaxy with the substrate. The GaN seed nucleation time determines the mean size diameter and structural quality, and a high Si-dopant concentration promotes vertical growth. Such GaN wires exhibit UV-light emission centred at approximately 350 nm and a weak yellow band (approximately 550 nm) at low temperature. |
doi_str_mv | 10.1088/0957-4484/21/1/015602 |
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This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diameters and a large length/diameter ratio (>100) on c-plane sapphire substrate. Detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth. In particular, the duration of the SiN(x) deposition prior to the wire growth is critical for controlling the epitaxy with the substrate. The GaN seed nucleation time determines the mean size diameter and structural quality, and a high Si-dopant concentration promotes vertical growth. 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Such GaN wires exhibit UV-light emission centred at approximately 350 nm and a weak yellow band (approximately 550 nm) at low temperature.</description><subject>Catalysts</subject><subject>Condensed Matter</subject><subject>Deposition</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Gallium nitrides</subject><subject>Mesoscopic Systems and Quantum Hall Effect</subject><subject>Nucleation</subject><subject>Physics</subject><subject>Sapphire</subject><subject>Vapour</subject><subject>Wire</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkctO3DAUhq0KBNOBR2jlHUJqGB_HTuwlGnGpNIIFrcTOcpJjJijBqZ0BZtd36Bv2SZpRRtMFVVn90jnfuUgfIZ-AnQFTasa0zBMhlJhxmMGMgcwY_0AmkGaQZJKrPTLZMYfkY4yPjAEoDgfkELQWGeQwIfd32LjExoht0WBFH4J_6ZfUO1ra3jbr2CcuINIre0Nf6oCRFmva4tD6_fOXDw_2qS7ps-38KtBuaSNS7Orevq6PyL6zTcTjbU7J98uLb_PrZHF79XV-vkhKIXmfVKksmQCLSliOGjlTrlSWq8JBJV2mVYEVlFKCBFQ81Zijc5mosmJIIdIpOR33Lm1julC3NqyNt7W5Pl-YTY0xrTXX6TMM7MnIdsH_WGHsTVvHEpvGPqFfRaOkzJkCLt4l8zRVDLIhpkSOZBl8jAHd7glgZmPKbCyYjQXDwYAZTQ1zn7cXVkWL1d-prZoB-DICte923X_uMl3lBpy9xf__wh-2lKrP</recordid><startdate>20100108</startdate><enddate>20100108</enddate><creator>Koester, R</creator><creator>Hwang, J S</creator><creator>Durand, C</creator><creator>Le Si Dang, D</creator><creator>Eymery, J</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope><scope>1XC</scope><orcidid>https://orcid.org/0000-0002-4216-1166</orcidid></search><sort><creationdate>20100108</creationdate><title>Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy</title><author>Koester, R ; Hwang, J S ; Durand, C ; Le Si Dang, D ; Eymery, J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c452t-d35c041ae84a2e9e208fc8a28bf1d5f698bed1c55151e8239e7eff64d6beff443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Catalysts</topic><topic>Condensed Matter</topic><topic>Deposition</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Gallium nitrides</topic><topic>Mesoscopic Systems and Quantum Hall Effect</topic><topic>Nucleation</topic><topic>Physics</topic><topic>Sapphire</topic><topic>Vapour</topic><topic>Wire</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Koester, R</creatorcontrib><creatorcontrib>Hwang, J S</creatorcontrib><creatorcontrib>Durand, C</creatorcontrib><creatorcontrib>Le Si Dang, D</creatorcontrib><creatorcontrib>Eymery, J</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Koester, R</au><au>Hwang, J S</au><au>Durand, C</au><au>Le Si Dang, D</au><au>Eymery, J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy</atitle><jtitle>Nanotechnology</jtitle><addtitle>Nanotechnology</addtitle><date>2010-01-08</date><risdate>2010</risdate><volume>21</volume><issue>1</issue><spage>015602</spage><epage>015602</epage><pages>015602-015602</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><notes>ObjectType-Article-2</notes><notes>ObjectType-Feature-1</notes><abstract>A catalyst-free method for growing self-assembled GaN wires on c-plane sapphire substrates by metal-organic vapour phase epitaxy is developed. This approach, based on in situ deposition of a thin SiN(x) layer (approximately 2 nm), enables epitaxial growth of c-oriented wires with 200-1500 nm diameters and a large length/diameter ratio (>100) on c-plane sapphire substrate. Detailed study of the growth mechanisms shows that a combination of key parameters is necessary to obtain vertical growth. In particular, the duration of the SiN(x) deposition prior to the wire growth is critical for controlling the epitaxy with the substrate. The GaN seed nucleation time determines the mean size diameter and structural quality, and a high Si-dopant concentration promotes vertical growth. Such GaN wires exhibit UV-light emission centred at approximately 350 nm and a weak yellow band (approximately 550 nm) at low temperature.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>19946171</pmid><doi>10.1088/0957-4484/21/1/015602</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-4216-1166</orcidid></addata></record> |
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subjects | Catalysts Condensed Matter Deposition Epitaxial growth Epitaxy Gallium nitrides Mesoscopic Systems and Quantum Hall Effect Nucleation Physics Sapphire Vapour Wire |
title | Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy |
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