Lattice parameter determination of a composition controlled Si1−x Gex layer on a Si (001) substrate using convergent-beam electron diffraction

The six lattice parameters (a, b, c, α, β and γ) of Si1−xGex, which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice param...

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Bibliographic Details
Published in:Journal of electron microscopy 2004-12, Vol.53 (6), p.593-600
Main Authors: Akaogi, Takayuki, Tsuda, Kenji, Terauchi, Masami, Tanaka, Michiyoshi
Format: Article
Language:English
Subjects:
convergent-beam electron diffraction
Crystallography
Ge concentration
Germanium - chemistry
lattice parameter determination
lattice strain
Microscopy, Electron, Transmission
Nanotechnology - methods
Si1−xGex
Silicon - chemistry
strain relaxation
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Summary:The six lattice parameters (a, b, c, α, β and γ) of Si1−xGex, which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si1−xGex varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.
ISSN:0022-0744
1477-9986
2050-5701
DOI:10.1093/jmicro/dfh091