Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes

We use high pressure techniques to investigate the properties of two classes of “dilute‐nitride‐phosphide”‐based devices; GaNP/GaP light emitting diodes for yellow–amber–red display applications and GaNAsP/GaP lasers, a potential route to producing lasers monolithically on silicon. Based upon high p...

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Published in:Physica Status Solidi (b) 2009-03, Vol.246 (3), p.527-531
Main Authors: Chamings, James, Ahmed, Sucheta, Adams, Alfred R., Sweeney, Stephen J., Odnoblyudov, Vladimir A., Tu, Charles W., Kunert, Bernardette, Stolz, Wolfgang
Format: Article
Language:English
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42.55.Px
71.20.Nr
71.55.Eq
72.20.Jv
85.60.Jb
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
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cited_by cdi_FETCH-LOGICAL-c4287-cea11d6399d3588e9fa93bc3db389444b7effc7145bafbda9058d945315c09293
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container_title Physica Status Solidi (b)
container_volume 246
creator Chamings, James
Ahmed, Sucheta
Adams, Alfred R.
Sweeney, Stephen J.
Odnoblyudov, Vladimir A.
Tu, Charles W.
Kunert, Bernardette
Stolz, Wolfgang
description We use high pressure techniques to investigate the properties of two classes of “dilute‐nitride‐phosphide”‐based devices; GaNP/GaP light emitting diodes for yellow–amber–red display applications and GaNAsP/GaP lasers, a potential route to producing lasers monolithically on silicon. Based upon high pressure electroluminescence measurements we find that the band anti‐crossing (BAC) model reasonably describes the GaN(As)P system based on an average of the nitrogen states. In terms of device characteristics, we find that carrier leakage into the X‐minima of GaP reduces the efficiency of GaNP/ GaP LEDs with increasing pressure. Lasing has been observed in GaNAsP/GaP devices with a pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ = 890 nm). A weak increase in threshold current with hydrostatic pressure indicates that a carrier leakage path that does not involve the GaP X ‐minima is the dominant carrier recombination mechanism in these devices, in contrast to the LEDs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssb.200880537
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source Wiley-Blackwell Journals
subjects 42.55.Px
71.20.Nr
71.55.Eq
72.20.Jv
85.60.Jb
Applied sciences
Electronics
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor lasers
laser diodes
title Band anti-crossing and carrier recombination in dilute nitride phosphide based lasers and light emitting diodes
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