Wafer‐Scale Atomic Assembly for 2D Multinary Transition Metal Dichalcogenides for Visible and NIR Photodetection

The tunable properties of 2D transition‐metal dichalcogenide (TMDs) materials are extensively investigated for high‐performance and wavelength‐tunable optoelectronic applications. However, the precise modification of large‐scale systems for practical optoelectronic applications remains a challenge....

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Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-08, Vol.20 (33), p.e2312120-n/a
Main Authors: Jeon, Hye Yoon, Song, Da Som, Shin, RoSa, Kwon, Yeong Min, Jo, Hyeong‐ku, Lee, Do Hyung, Lee, Eunji, Jang, Moonjeong, So, Hee‐Soo, Kang, Saewon, Yim, Soonmin, Myung, Sung, Lee, Sun Sook, Yoon, Dae Ho, Kim, Chang Gyoun, Lim, Jongsun, Song, Wooseok
Format: Article
Language:English
Subjects:
Assembly
Broadband
Chalcogenides
large‐area synthesis
Molybdenum disulfide
Near infrared radiation
optoelectronic properties
Optoelectronics
photodetection
Photoelectricity
Thermal decomposition
Transition metal compounds
transition metal dichalcogenides
wafer‐scale assembly
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Summary:The tunable properties of 2D transition‐metal dichalcogenide (TMDs) materials are extensively investigated for high‐performance and wavelength‐tunable optoelectronic applications. However, the precise modification of large‐scale systems for practical optoelectronic applications remains a challenge. In this study, a wafer‐scale atomic assembly process to produce 2D multinary (binary, ternary, and quaternary) TMDs for broadband photodetection is demonstrated. The large‐area growth of homogeneous MoS2, Ni0.06Mo0.26S0.68, and Ni0.1Mo0.9S1.79Se0.21 is carried out using a succinct coating of the single‐source precursor and subsequent thermal decomposition combined with thermal evaporation of the chalcogen powder. The optoelectrical properties of the multinary TMDs are dependent on the combination of heteroatoms. The maximum photoresponsivity of the MoS2‐, Ni0.06Mo0.26S0.68‐, and Ni0.1Mo0.9S1.79Se0.21‐based photodetectors is 3.51 × 10−4, 1.48, and 0.9 A W−1 for 532 nm and 0.063, 0.42, and 1.4 A W−1 for 1064 nm, respectively. The devices exhibited excellent photoelectrical properties, which is highly beneficial for visible and near‐infrared (NIR) photodetection. Wafer‐scale atomic assembly method to produce 2D multinary (binary, ternary, and quaternary) semiconductors for broadband photodetection is accomplished using a succinct coating of the single‐precursor and subsequent thermal decomposition combined with thermal evaporation of the chalcogen powder. The MoS2‐, Ni0.06Mo0.26S0.68‐, and Ni0.1Mo0.9S1.79Se0.21‐based photodetector exhibit excellent photoelectrical properties, which is highly beneficial for visible and near‐infrared photodetection.
ISSN:1613-6810
1613-6829
1613-6829
DOI:10.1002/smll.202312120