Investigation of electrodeposited p-Si/Cd1−xZnxS1−ySey heterojunction solar cells

Polycrystalline films of n-Cd1-xZnxS1-ySey with different x and y values (0.1 < x < 0.8 and 0 < y < 0.2) were prepared by electrodeposition from solution of CdCl2+ZnCl2+Na2S2O3+SeO2 (or Na2Se2O3) on p-Si substrates. The dependence of the electric and photoelectric parameters in these het...

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Bibliographic Details
Published in:Thin solid films 2006-07, Vol.511-512 (Complete), p.140-142
Main Authors: Abdinov, A.Sh, Mamedov, H.M., Amirova, S.I.
Format: Article
Language:English
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Summary:Polycrystalline films of n-Cd1-xZnxS1-ySey with different x and y values (0.1 < x < 0.8 and 0 < y < 0.2) were prepared by electrodeposition from solution of CdCl2+ZnCl2+Na2S2O3+SeO2 (or Na2Se2O3) on p-Si substrates. The dependence of the electric and photoelectric parameters in these heterojunctions on the x, y and heat treatment condition were investigated. It was found that annealing the heterojunctions at Ta=400 oC for @ta=5@?6 min in air leads to an improving of the electric and photoelectric parameters. The evaluation of solar cell parameters was carried out using the dark and light current-voltage characteristics. Under AM 1.5 condition the open circuit photovoltage and short circuit photocurrent density of cells p-Si/n-Cd03Zn0.7s0.8Se02 were Voc=0.6 V, Jsc=22.8 mA/cm2, respectively.
ISSN:0040-6090
DOI:10.1016/j.tsf.2005.11.088