CHARACTERIZATION OF POLARIZATION SWITCHING BEHAVIOR OF Pt/SrBi2Ta2O9/Pt FERROELECTRIC CAPACITORS IN FERROELECTRIC RANDOM ACCESS MEMORY

Authors investigated on the polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors for ferroelectric random access memory (FeRAM). Apparent switching time of the ferroelectric capacitors, measured with ferroelectric tester, is composed with various parameters of measurement set...

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Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2A, pp. 694-697. 2002 Part 1. Vol. 41, no. 2A, pp. 694-697. 2002, 2002, Vol.41 (2A), p.694-697
Main Authors: Kang, Y M, Chung, C H, Oh, S H, Yang, B, Lee, S S, Hong, S K, Kang, N S
Format: Article
Language:English
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Summary:Authors investigated on the polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors for ferroelectric random access memory (FeRAM). Apparent switching time of the ferroelectric capacitors, measured with ferroelectric tester, is composed with various parameters of measurement set-up, and is also a function of area of the ferroelectric capacitors. True switching time of the ferroelectric capacitor, which is obtained by removing the effect of the measurement set-up, is about 10 ns. However, it is not a limiting factor for realization of high-speed (approx 50 ns) non-volatile FeRAM. 3 refs.
ISSN:0021-4922
DOI:10.1143/JJAP.41.694