Growth of shaped single crystals of refractory compounds

Refractory compounds prepared from the melt of a predetermined geometry by using a shaping aid are considered. As refractory compounds are being produced, one has to deal with a number of specific features of crystal growth associated both with the operation at elevated temperatures and the chemical...

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Published in:Progress in crystal growth and characterization 1988, Vol.16 (1-4), p.19-57
Main Authors: Antonov, P.I., Bakholdin, S.I., Nikanorov, S.P.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63
cites cdi_FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63
container_end_page 57
container_issue 1-4
container_start_page 19
container_title Progress in crystal growth and characterization
container_volume 16
creator Antonov, P.I.
Bakholdin, S.I.
Nikanorov, S.P.
description Refractory compounds prepared from the melt of a predetermined geometry by using a shaping aid are considered. As refractory compounds are being produced, one has to deal with a number of specific features of crystal growth associated both with the operation at elevated temperatures and the chemical structure of the starting material proper. Most of the work was concerned with the growth of aluminium oxide (sapphire) which has found much practical use. Single crystals of a complex composition based on a combination of oxides (garnets, spinels) or a chemical element plus an oxide (lithium niobate, bismuth germanate or silicate) binary high boiling point temperature compounds (gallium arsenide), iron-based complex alloys, copper--aluminium nickel are also considered. Following a consideration of the mechanisms of refractory compound crystallization an attempt will be undertaken to gain an insight into the problem of control of structural imperfection of the crystal directly during crystallization. 73 ref.--AA
doi_str_mv 10.1016/0146-3535(88)90014-7
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24891849</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>0146353588900147</els_id><sourcerecordid>24891849</sourcerecordid><originalsourceid>FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63</originalsourceid><addsrcrecordid>eNp9kDFPwzAQhT2ARCn8A4ZMCIaA7dhxvCChihakSiwwW_bZpkZpHOwU1H9PQhEj0-nuvXe6-xC6IPiGYFLfYsLqsuIVv2qaa4nHthRHaPY3PkGnOb9jTDHBcoaaVYpfw6aIvsgb3Ttb5NC9ta6AtM-DbvOkJOeThiGmfQFx28ddZ_MZOvaj7M5_6xy9Lh9eFo_l-nn1tLhfl1BVYig5teAFBk51LYT3wpDaGqwlBcOwB2Mw55IBrojw1DjjKIDg3gKTkuu6mqPLw94-xY-dy4PahgyubXXn4i4ryhpJGiZHIzsYIcWcx5NVn8JWp70iWE1o1MRATQxU06gfNEqMsbtDzI1PfAaXVIbgOnA2JAeDsjH8v-AbbKBteQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24891849</pqid></control><display><type>article</type><title>Growth of shaped single crystals of refractory compounds</title><source>Backfile Package - Materials Science [YMS]</source><source>Backfile Package - Physics General (Legacy) [YPA]</source><creator>Antonov, P.I. ; Bakholdin, S.I. ; Nikanorov, S.P.</creator><creatorcontrib>Antonov, P.I. ; Bakholdin, S.I. ; Nikanorov, S.P.</creatorcontrib><description>Refractory compounds prepared from the melt of a predetermined geometry by using a shaping aid are considered. As refractory compounds are being produced, one has to deal with a number of specific features of crystal growth associated both with the operation at elevated temperatures and the chemical structure of the starting material proper. Most of the work was concerned with the growth of aluminium oxide (sapphire) which has found much practical use. Single crystals of a complex composition based on a combination of oxides (garnets, spinels) or a chemical element plus an oxide (lithium niobate, bismuth germanate or silicate) binary high boiling point temperature compounds (gallium arsenide), iron-based complex alloys, copper--aluminium nickel are also considered. Following a consideration of the mechanisms of refractory compound crystallization an attempt will be undertaken to gain an insight into the problem of control of structural imperfection of the crystal directly during crystallization. 73 ref.--AA</description><identifier>ISSN: 0146-3535</identifier><identifier>DOI: 10.1016/0146-3535(88)90014-7</identifier><language>eng</language><publisher>Elsevier B.V</publisher><ispartof>Progress in crystal growth and characterization, 1988, Vol.16 (1-4), p.19-57</ispartof><rights>1988</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63</citedby><cites>FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/0146353588900147$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>315,786,790,3574,3651,4043,27956,27957,27958,46039,46047</link.rule.ids></links><search><creatorcontrib>Antonov, P.I.</creatorcontrib><creatorcontrib>Bakholdin, S.I.</creatorcontrib><creatorcontrib>Nikanorov, S.P.</creatorcontrib><title>Growth of shaped single crystals of refractory compounds</title><title>Progress in crystal growth and characterization</title><description>Refractory compounds prepared from the melt of a predetermined geometry by using a shaping aid are considered. As refractory compounds are being produced, one has to deal with a number of specific features of crystal growth associated both with the operation at elevated temperatures and the chemical structure of the starting material proper. Most of the work was concerned with the growth of aluminium oxide (sapphire) which has found much practical use. Single crystals of a complex composition based on a combination of oxides (garnets, spinels) or a chemical element plus an oxide (lithium niobate, bismuth germanate or silicate) binary high boiling point temperature compounds (gallium arsenide), iron-based complex alloys, copper--aluminium nickel are also considered. Following a consideration of the mechanisms of refractory compound crystallization an attempt will be undertaken to gain an insight into the problem of control of structural imperfection of the crystal directly during crystallization. 73 ref.--AA</description><issn>0146-3535</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNp9kDFPwzAQhT2ARCn8A4ZMCIaA7dhxvCChihakSiwwW_bZpkZpHOwU1H9PQhEj0-nuvXe6-xC6IPiGYFLfYsLqsuIVv2qaa4nHthRHaPY3PkGnOb9jTDHBcoaaVYpfw6aIvsgb3Ttb5NC9ta6AtM-DbvOkJOeThiGmfQFx28ddZ_MZOvaj7M5_6xy9Lh9eFo_l-nn1tLhfl1BVYig5teAFBk51LYT3wpDaGqwlBcOwB2Mw55IBrojw1DjjKIDg3gKTkuu6mqPLw94-xY-dy4PahgyubXXn4i4ryhpJGiZHIzsYIcWcx5NVn8JWp70iWE1o1MRATQxU06gfNEqMsbtDzI1PfAaXVIbgOnA2JAeDsjH8v-AbbKBteQ</recordid><startdate>1988</startdate><enddate>1988</enddate><creator>Antonov, P.I.</creator><creator>Bakholdin, S.I.</creator><creator>Nikanorov, S.P.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>1988</creationdate><title>Growth of shaped single crystals of refractory compounds</title><author>Antonov, P.I. ; Bakholdin, S.I. ; Nikanorov, S.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Antonov, P.I.</creatorcontrib><creatorcontrib>Bakholdin, S.I.</creatorcontrib><creatorcontrib>Nikanorov, S.P.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Progress in crystal growth and characterization</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Antonov, P.I.</au><au>Bakholdin, S.I.</au><au>Nikanorov, S.P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of shaped single crystals of refractory compounds</atitle><jtitle>Progress in crystal growth and characterization</jtitle><date>1988</date><risdate>1988</risdate><volume>16</volume><issue>1-4</issue><spage>19</spage><epage>57</epage><pages>19-57</pages><issn>0146-3535</issn><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><abstract>Refractory compounds prepared from the melt of a predetermined geometry by using a shaping aid are considered. As refractory compounds are being produced, one has to deal with a number of specific features of crystal growth associated both with the operation at elevated temperatures and the chemical structure of the starting material proper. Most of the work was concerned with the growth of aluminium oxide (sapphire) which has found much practical use. Single crystals of a complex composition based on a combination of oxides (garnets, spinels) or a chemical element plus an oxide (lithium niobate, bismuth germanate or silicate) binary high boiling point temperature compounds (gallium arsenide), iron-based complex alloys, copper--aluminium nickel are also considered. Following a consideration of the mechanisms of refractory compound crystallization an attempt will be undertaken to gain an insight into the problem of control of structural imperfection of the crystal directly during crystallization. 73 ref.--AA</abstract><pub>Elsevier B.V</pub><doi>10.1016/0146-3535(88)90014-7</doi><tpages>39</tpages></addata></record>
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recordid cdi_proquest_miscellaneous_24891849
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title Growth of shaped single crystals of refractory compounds
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T15%3A39%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20shaped%20single%20crystals%20of%20refractory%20compounds&rft.jtitle=Progress%20in%20crystal%20growth%20and%20characterization&rft.au=Antonov,%20P.I.&rft.date=1988&rft.volume=16&rft.issue=1-4&rft.spage=19&rft.epage=57&rft.pages=19-57&rft.issn=0146-3535&rft_id=info:doi/10.1016/0146-3535(88)90014-7&rft_dat=%3Cproquest_cross%3E24891849%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c337t-52dcf70c52a677ff7b16db0a92cb40fcbb05594c0317f2bebe2cc75fdc4995a63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=24891849&rft_id=info:pmid/&rfr_iscdi=true