Electric-field-driven dual-functional molecular switches in tunnel junctions

To avoid crosstalk and suppress leakage currents in resistive random access memories (RRAMs), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode-one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footpr...

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Bibliographic Details
Published in:Nature materials 2020-08, Vol.19 (8), p.843-848
Main Authors: Han, Yingmei, Nickle, Cameron, Zhang, Ziyu, Astier, Hippolyte P A G, Duffin, Thorin J, Qi, Dongchen, Wang, Zhe, Del Barco, Enrique, Thompson, Damien, Nijhuis, Christian A
Format: Article
Language:English
Subjects:
Bias
Crosstalk
Dimerization
Electric fields
Electric potential
Electrical junctions
Electrodes
Electronic devices
Ion migration
Leakage current
Molecular machines
Molecular orbitals
Physics
Random access memory
Switches
Thickness
Tunnel junctions
Voltage
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Summary:To avoid crosstalk and suppress leakage currents in resistive random access memories (RRAMs), a resistive switch and a current rectifier (diode) are usually combined in series in a one diode-one resistor (1D-1R) RRAM. However, this complicates the design of next-generation RRAM, increases the footprint of devices and increases the operating voltage as the potential drops over two consecutive junctions . Here, we report a molecular tunnel junction based on molecules that provide an unprecedented dual functionality of diode and variable resistor, resulting in a molecular-scale 1D-1R RRAM with a current rectification ratio of 2.5 × 10 and resistive on/off ratio of 6.7 × 10 , and a low drive voltage of 0.89 V. The switching relies on dimerization of redox units, resulting in hybridization of molecular orbitals accompanied by directional ion migration. This electric-field-driven molecular switch operating in the tunnelling regime enables a class of molecular devices where multiple electronic functions are preprogrammed inside a single molecular layer with a thickness of only 2 nm.
ISSN:1476-1122
1476-4660
DOI:10.1038/s41563-020-0697-5