Influence of defects on electrical properties of electrodeposited co-doped ZnO nanocoatings

We present a systematic investigation of the electrical properties of undoped and Co-doped ZnO nanostructures at room temperature as an extensive study of the role of defects in ZnO. The ZnO nanostructures were fabricated by the electrodeposition method at low bath temperature (80 °C) and the Co con...

Full description

Saved in:
Bibliographic Details
Published in:Materials research express 2017-01, Vol.4 (1), p.15001-015001
Main Authors: Simimol, A, Anappara, Aji A, Barshilia, Harish C
Format: Article
Language:English
Subjects:
Annealing
Carrier density
Co-doping
Defect annealing
Defects
Electrical properties
Nanostructure
Volt-ampere characteristics
Zinc oxide
ZnO nanostructures
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present a systematic investigation of the electrical properties of undoped and Co-doped ZnO nanostructures at room temperature as an extensive study of the role of defects in ZnO. The ZnO nanostructures were fabricated by the electrodeposition method at low bath temperature (80 °C) and the Co concentration was varied from 0.01 to 0.2 mM. Electrical properties of the undoped and Co-doped ZnO nanostructures were studied in detail. The carrier concentration increases while the mobility reduces with increase in Co-concentration. The resistivity increases with an increase in Co-concentration and the reason is correlated with the defects in ZnO. In order to understand more details of the role of defects in the present I-V characteristic behavior of the Co-doped ZnO, high temperature vacuum annealing of ZnO sample was carried out. Electrical, optical and magnetic properties of the high temperature vacuum annealed ZnO were studied in detail. Photoluminescence spectroscopy (PL) results revealed more information of the defect levels which act as scattering centers for the carriers. Co-doping as well as annealing at high temperature in vacuum environment tunes the defects in ZnO and which influence the optical, magnetic and electrical behavior of the ZnO nanostructures.
ISSN:2053-1591
2053-1591
DOI:10.1088/2053-1591/aa5135