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Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes
Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, struc...
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| Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2016-04, Vol.122 (4), p.1-9, Article 270 |
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| container_title | Applied physics. A, Materials science & processing |
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| creator | Bogdanowicz, Robert Sobaszek, Michał Ficek, Mateusz Kopiec, Daniel Moczała, Magdalena Orłowska, Karolina Sawczak, Mirosław Gotszalk, Teodor |
| description | Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm
−1
. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM–Kelvin probe force microscopy (KPFM). The crystallite–grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level. |
| doi_str_mv | 10.1007/s00339-016-9829-9 |
| format | article |
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−1
. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM–Kelvin probe force microscopy (KPFM). The crystallite–grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-016-9829-9</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Boron ; Characterization and Evaluation of Materials ; Compounding ; Compounds ; Condensed Matter Physics ; Diamond films ; Diamonds ; Machines ; Manufacturing ; Nanocrystals ; Nanotechnology ; Optical and Electronic Materials ; Parameters ; Physics ; Physics and Astronomy ; Processes ; Surfaces and Interfaces ; Thin Films ; Work functions</subject><ispartof>Applied physics. A, Materials science & processing, 2016-04, Vol.122 (4), p.1-9, Article 270</ispartof><rights>The Author(s) 2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-8482ca43ace6f43a579a0cc261a71aad845083f8b5e04e2b40c31fa15a302563</citedby><cites>FETCH-LOGICAL-c364t-8482ca43ace6f43a579a0cc261a71aad845083f8b5e04e2b40c31fa15a302563</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Bogdanowicz, Robert</creatorcontrib><creatorcontrib>Sobaszek, Michał</creatorcontrib><creatorcontrib>Ficek, Mateusz</creatorcontrib><creatorcontrib>Kopiec, Daniel</creatorcontrib><creatorcontrib>Moczała, Magdalena</creatorcontrib><creatorcontrib>Orłowska, Karolina</creatorcontrib><creatorcontrib>Sawczak, Mirosław</creatorcontrib><creatorcontrib>Gotszalk, Teodor</creatorcontrib><title>Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm
−1
. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM–Kelvin probe force microscopy (KPFM). The crystallite–grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.</description><subject>Boron</subject><subject>Characterization and Evaluation of Materials</subject><subject>Compounding</subject><subject>Compounds</subject><subject>Condensed Matter Physics</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Nanocrystals</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Parameters</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Work functions</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwA9gyshjOH0nsEVXlQ2rFQCcW6-I4kCq1i50O5dfjKszc8kp373unewi5ZXDPAOqHBCCEpsAqqhXXVJ-RGZOCU6gEnJMZaFlTJXR1Sa5S2kIuyfmMfDxhE3uLYx98gb4t7BdGtKOL_c_UDF3RhBg8bcPetYVHH2w8phGHofeuaHvcBd9SG3DM4_Vy_V7sY2hcuiYXHQ7J3fzpnGyelpvFC129Pb8uHlfUikqOVEnFLUqB1lVdlrLWCNbyimHNEFslS1CiU03pQDreSLCCdchKFMDLSszJ3bQ2X_0-uDSaXZ-sGwb0LhySYUoB8ExBZiubrDaGlKLrzD72O4xHw8CcMJoJo8kYzQmj0TnDp0zKXv_potmGQ_T5oX9Cv6YLdfo</recordid><startdate>20160401</startdate><enddate>20160401</enddate><creator>Bogdanowicz, Robert</creator><creator>Sobaszek, Michał</creator><creator>Ficek, Mateusz</creator><creator>Kopiec, Daniel</creator><creator>Moczała, Magdalena</creator><creator>Orłowska, Karolina</creator><creator>Sawczak, Mirosław</creator><creator>Gotszalk, Teodor</creator><general>Springer Berlin Heidelberg</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160401</creationdate><title>Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes</title><author>Bogdanowicz, Robert ; Sobaszek, Michał ; Ficek, Mateusz ; Kopiec, Daniel ; Moczała, Magdalena ; Orłowska, Karolina ; Sawczak, Mirosław ; Gotszalk, Teodor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-8482ca43ace6f43a579a0cc261a71aad845083f8b5e04e2b40c31fa15a302563</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Boron</topic><topic>Characterization and Evaluation of Materials</topic><topic>Compounding</topic><topic>Compounds</topic><topic>Condensed Matter Physics</topic><topic>Diamond films</topic><topic>Diamonds</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Nanocrystals</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Parameters</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bogdanowicz, Robert</creatorcontrib><creatorcontrib>Sobaszek, Michał</creatorcontrib><creatorcontrib>Ficek, Mateusz</creatorcontrib><creatorcontrib>Kopiec, Daniel</creatorcontrib><creatorcontrib>Moczała, Magdalena</creatorcontrib><creatorcontrib>Orłowska, Karolina</creatorcontrib><creatorcontrib>Sawczak, Mirosław</creatorcontrib><creatorcontrib>Gotszalk, Teodor</creatorcontrib><collection>Springer_OA刊</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bogdanowicz, Robert</au><au>Sobaszek, Michał</au><au>Ficek, Mateusz</au><au>Kopiec, Daniel</au><au>Moczała, Magdalena</au><au>Orłowska, Karolina</au><au>Sawczak, Mirosław</au><au>Gotszalk, Teodor</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2016-04-01</date><risdate>2016</risdate><volume>122</volume><issue>4</issue><spage>1</spage><epage>9</epage><pages>1-9</pages><artnum>270</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><abstract>Fabrication processes of thin boron-doped nanocrystalline diamond (B-NCD) films on silicon-based micro- and nano-electromechanical structures have been investigated. B-NCD films were deposited using microwave plasma assisted chemical vapour deposition method. The variation in B-NCD morphology, structure and optical parameters was particularly investigated. The use of truncated cone-shaped substrate holder enabled to grow thin fully encapsulated nanocrystalline diamond film with a thickness of approx. 60 nm and RMS roughness of 17 nm. Raman spectra present the typical boron-doped nanocrystalline diamond line recorded at 1148 cm
−1
. Moreover, the change in mechanical parameters of silicon cantilevers over-coated with boron-doped diamond films was investigated with laser vibrometer. The increase of resonance to frequency of over-coated cantilever is attributed to the change in spring constant caused by B-NCD coating. Topography and electrical parameters of boron-doped diamond films were investigated by tapping mode AFM and electrical mode of AFM–Kelvin probe force microscopy (KPFM). The crystallite–grain size was recorded at 153 and 238 nm for boron-doped film and undoped, respectively. Based on the contact potential difference data from the KPFM measurements, the work function of diamond layers was estimated. For the undoped diamond films, average CPD of 650 mV and for boron-doped layer 155 mV were achieved. Based on CPD values, the values of work functions were calculated as 4.65 and 5.15 eV for doped and undoped diamond film, respectively. Boron doping increases the carrier density and the conductivity of the material and, consequently, the Fermi level.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-016-9829-9</doi><tpages>9</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Boron Characterization and Evaluation of Materials Compounding Compounds Condensed Matter Physics Diamond films Diamonds Machines Manufacturing Nanocrystals Nanotechnology Optical and Electronic Materials Parameters Physics Physics and Astronomy Processes Surfaces and Interfaces Thin Films Work functions |
| title | Fabrication and characterization of boron-doped nanocrystalline diamond-coated MEMS probes |
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