Loading…
Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence
We have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter ~80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of...
Saved in:
Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2016-07, Vol.122 (7), p.1-10, Article 669 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3 |
---|---|
cites | cdi_FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3 |
container_end_page | 10 |
container_issue | 7 |
container_start_page | 1 |
container_title | Applied physics. A, Materials science & processing |
container_volume | 122 |
creator | Karadan, Prajith John, Siju Anappara, Aji A. Narayana, Chandrabhas Barshilia, Harish C. |
description | We have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter ~80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of mesoporous structures was detected on the top of silicon nanopillars using field emission scanning electron microscopy. The mesoporosity of the SiNPLs is confirmed by Brunauer–Emmett–Teller measurements. The peak shift and the splitting of optical phonon modes into LO and TO modes in the micro-Raman spectra of mesoporous SiNPLs manifest the presence of 2–3 nm porous Si nanocrystallites (
P
-SiNCs) on the top of SiNPLs and the size of crystallites was calculated using bond polarizability model for spherical phonon confinement. The origin of red luminescence is explained using quantum confinement (QC) and QC luminescent center models for the
P
-SiNCs, which is correlated with the micro-Raman spectra. Finally, we confirmed the origin of the red luminescence is from the P-SiNCs formed on surface of SiNPLs, highly desired for LED devices by suitably tailoring the substrate. |
doi_str_mv | 10.1007/s00339-016-0203-8 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1880024262</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880024262</sourcerecordid><originalsourceid>FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3</originalsourceid><addsrcrecordid>eNp9kU1v1DAQhiMEEkvhB3DzkUtgbGfjhBuqyodUqVIFZ2vqTDauHDt4vKD9WfxD3F3O-DKy5n3m622atxLeSwDzgQG0HluQfQsKdDs8a3ay06qFXsPzZgdjZ9pBj_3L5hXzI9TXKbVr_tz8SuFYfIpiJbdg9LyKNNcPpy3ldGTBPnhX8xFj2nwImFkccvodxcOp6gqGFpk9F5qEW2j1DoOg4hYfDwLjdAZ5WyiTCL4s6ZBxW04fhUs5U8Bz89ryHleMgjdyJeMZzLXitqRSJ1x9JHYUHb1uXswYmN78i1fNj88336-_trd3X75df7ptnVaytHtpRkQDOI9aS3JEetqbzqDr1NgruX-YnDRmMtA5cCM5A2rSaEaQbkZF-qp5d6m75fTzSFzs6usEdf9I9SxWDgOA6lSvqlRepC4n5kyz3bJfMZ-sBPtkj73YY6s99skeO1RGXRiu2nigbB_TMce60X-gv4GjmGk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880024262</pqid></control><display><type>article</type><title>Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence</title><source>Springer Link</source><creator>Karadan, Prajith ; John, Siju ; Anappara, Aji A. ; Narayana, Chandrabhas ; Barshilia, Harish C.</creator><creatorcontrib>Karadan, Prajith ; John, Siju ; Anappara, Aji A. ; Narayana, Chandrabhas ; Barshilia, Harish C.</creatorcontrib><description>We have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter ~80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of mesoporous structures was detected on the top of silicon nanopillars using field emission scanning electron microscopy. The mesoporosity of the SiNPLs is confirmed by Brunauer–Emmett–Teller measurements. The peak shift and the splitting of optical phonon modes into LO and TO modes in the micro-Raman spectra of mesoporous SiNPLs manifest the presence of 2–3 nm porous Si nanocrystallites (
P
-SiNCs) on the top of SiNPLs and the size of crystallites was calculated using bond polarizability model for spherical phonon confinement. The origin of red luminescence is explained using quantum confinement (QC) and QC luminescent center models for the
P
-SiNCs, which is correlated with the micro-Raman spectra. Finally, we confirmed the origin of the red luminescence is from the P-SiNCs formed on surface of SiNPLs, highly desired for LED devices by suitably tailoring the substrate.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s00339-016-0203-8</identifier><language>eng</language><publisher>Berlin/Heidelberg: Springer Berlin Heidelberg</publisher><subject>Characterization and Evaluation of Materials ; Chemical etching ; Condensed Matter Physics ; Correlation ; Lithography ; Machines ; Manufacturing ; Nanostructure ; Nanotechnology ; Optical and Electronic Materials ; Origins ; Phonons ; Physics ; Physics and Astronomy ; Processes ; Silicon ; Spectra ; Surfaces and Interfaces ; Thin Films</subject><ispartof>Applied physics. A, Materials science & processing, 2016-07, Vol.122 (7), p.1-10, Article 669</ispartof><rights>Springer-Verlag Berlin Heidelberg 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3</citedby><cites>FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids></links><search><creatorcontrib>Karadan, Prajith</creatorcontrib><creatorcontrib>John, Siju</creatorcontrib><creatorcontrib>Anappara, Aji A.</creatorcontrib><creatorcontrib>Narayana, Chandrabhas</creatorcontrib><creatorcontrib>Barshilia, Harish C.</creatorcontrib><title>Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence</title><title>Applied physics. A, Materials science & processing</title><addtitle>Appl. Phys. A</addtitle><description>We have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter ~80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of mesoporous structures was detected on the top of silicon nanopillars using field emission scanning electron microscopy. The mesoporosity of the SiNPLs is confirmed by Brunauer–Emmett–Teller measurements. The peak shift and the splitting of optical phonon modes into LO and TO modes in the micro-Raman spectra of mesoporous SiNPLs manifest the presence of 2–3 nm porous Si nanocrystallites (
P
-SiNCs) on the top of SiNPLs and the size of crystallites was calculated using bond polarizability model for spherical phonon confinement. The origin of red luminescence is explained using quantum confinement (QC) and QC luminescent center models for the
P
-SiNCs, which is correlated with the micro-Raman spectra. Finally, we confirmed the origin of the red luminescence is from the P-SiNCs formed on surface of SiNPLs, highly desired for LED devices by suitably tailoring the substrate.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemical etching</subject><subject>Condensed Matter Physics</subject><subject>Correlation</subject><subject>Lithography</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Nanostructure</subject><subject>Nanotechnology</subject><subject>Optical and Electronic Materials</subject><subject>Origins</subject><subject>Phonons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Silicon</subject><subject>Spectra</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kU1v1DAQhiMEEkvhB3DzkUtgbGfjhBuqyodUqVIFZ2vqTDauHDt4vKD9WfxD3F3O-DKy5n3m622atxLeSwDzgQG0HluQfQsKdDs8a3ay06qFXsPzZgdjZ9pBj_3L5hXzI9TXKbVr_tz8SuFYfIpiJbdg9LyKNNcPpy3ldGTBPnhX8xFj2nwImFkccvodxcOp6gqGFpk9F5qEW2j1DoOg4hYfDwLjdAZ5WyiTCL4s6ZBxW04fhUs5U8Bz89ryHleMgjdyJeMZzLXitqRSJ1x9JHYUHb1uXswYmN78i1fNj88336-_trd3X75df7ptnVaytHtpRkQDOI9aS3JEetqbzqDr1NgruX-YnDRmMtA5cCM5A2rSaEaQbkZF-qp5d6m75fTzSFzs6usEdf9I9SxWDgOA6lSvqlRepC4n5kyz3bJfMZ-sBPtkj73YY6s99skeO1RGXRiu2nigbB_TMce60X-gv4GjmGk</recordid><startdate>20160701</startdate><enddate>20160701</enddate><creator>Karadan, Prajith</creator><creator>John, Siju</creator><creator>Anappara, Aji A.</creator><creator>Narayana, Chandrabhas</creator><creator>Barshilia, Harish C.</creator><general>Springer Berlin Heidelberg</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160701</creationdate><title>Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence</title><author>Karadan, Prajith ; John, Siju ; Anappara, Aji A. ; Narayana, Chandrabhas ; Barshilia, Harish C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemical etching</topic><topic>Condensed Matter Physics</topic><topic>Correlation</topic><topic>Lithography</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Nanostructure</topic><topic>Nanotechnology</topic><topic>Optical and Electronic Materials</topic><topic>Origins</topic><topic>Phonons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Silicon</topic><topic>Spectra</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karadan, Prajith</creatorcontrib><creatorcontrib>John, Siju</creatorcontrib><creatorcontrib>Anappara, Aji A.</creatorcontrib><creatorcontrib>Narayana, Chandrabhas</creatorcontrib><creatorcontrib>Barshilia, Harish C.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Karadan, Prajith</au><au>John, Siju</au><au>Anappara, Aji A.</au><au>Narayana, Chandrabhas</au><au>Barshilia, Harish C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2016-07-01</date><risdate>2016</risdate><volume>122</volume><issue>7</issue><spage>1</spage><epage>10</epage><pages>1-10</pages><artnum>669</artnum><issn>0947-8396</issn><eissn>1432-0630</eissn><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><abstract>We have fabricated highly ordered, vertically aligned, high aspect ratio silicon nanopillars (SiNPLs) of diameter ~80 nm by combining metal-assisted chemical etching and nanosphere lithography. The evolution of surface morphology of porous silicon nanopillars has been explained, and the presence of mesoporous structures was detected on the top of silicon nanopillars using field emission scanning electron microscopy. The mesoporosity of the SiNPLs is confirmed by Brunauer–Emmett–Teller measurements. The peak shift and the splitting of optical phonon modes into LO and TO modes in the micro-Raman spectra of mesoporous SiNPLs manifest the presence of 2–3 nm porous Si nanocrystallites (
P
-SiNCs) on the top of SiNPLs and the size of crystallites was calculated using bond polarizability model for spherical phonon confinement. The origin of red luminescence is explained using quantum confinement (QC) and QC luminescent center models for the
P
-SiNCs, which is correlated with the micro-Raman spectra. Finally, we confirmed the origin of the red luminescence is from the P-SiNCs formed on surface of SiNPLs, highly desired for LED devices by suitably tailoring the substrate.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer Berlin Heidelberg</pub><doi>10.1007/s00339-016-0203-8</doi><tpages>10</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0947-8396 |
ispartof | Applied physics. A, Materials science & processing, 2016-07, Vol.122 (7), p.1-10, Article 669 |
issn | 0947-8396 1432-0630 |
language | eng |
recordid | cdi_proquest_miscellaneous_1880024262 |
source | Springer Link |
subjects | Characterization and Evaluation of Materials Chemical etching Condensed Matter Physics Correlation Lithography Machines Manufacturing Nanostructure Nanotechnology Optical and Electronic Materials Origins Phonons Physics Physics and Astronomy Processes Silicon Spectra Surfaces and Interfaces Thin Films |
title | Evolution mechanism of mesoporous silicon nanopillars grown by metal-assisted chemical etching and nanosphere lithography: correlation of Raman spectra and red photoluminescence |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-22T02%3A34%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Evolution%20mechanism%20of%20mesoporous%20silicon%20nanopillars%20grown%20by%20metal-assisted%20chemical%20etching%20and%20nanosphere%20lithography:%20correlation%20of%20Raman%20spectra%20and%20red%20photoluminescence&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Karadan,%20Prajith&rft.date=2016-07-01&rft.volume=122&rft.issue=7&rft.spage=1&rft.epage=10&rft.pages=1-10&rft.artnum=669&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s00339-016-0203-8&rft_dat=%3Cproquest_cross%3E1880024262%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c321t-5179aa70af9331ecee3d5747ac4296215bdc177d704c0c9ec702d3a7901cfa2e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1880024262&rft_id=info:pmid/&rfr_iscdi=true |