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Ferroelectric polymer tuned two dimensional layered MoTe2 photodetector

Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to...

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Bibliographic Details
Published in:RSC advances 2016-01, Vol.6 (90), p.87416-87421
Main Authors: Huang, Hai, Wang, Xudong, Wang, Peng, Wu, Guangjian, Chen, Yan, Meng, Caimin, Liao, Lei, Wang, Jianlu, Hu, Weida, Shen, Hong, Lin, Tie, Sun, Jinglan, Meng, Xiangjian, Chen, Xiaoshuang, Chu, Junhao
Format: Article
Language:English
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Summary:Two dimensional material based photodetectors have attracted wide attention in recent years. In this work, a few-layer MoTe2 based phototransistor with a ferroelectric polymer P(VDF-TrFE) topgate is fabricated. The remanent polarization of the ferroelectrics could deplete the channel effectively to decrease the dark current of the device by more than one magnitude. As a result, the MoTe2 phototransistor has an appreciable photoresponse for visible light and near infrared. The device has a broad photoresponse range (0.6-1.5 mu m), the responsivity and detectivity reach 16.4 mA W-1 and 1.94 108 Jones for 1060 nm light. The device works without an external gate voltage, which makes for higher reliability and lower power dissipation for practical application.
ISSN:2046-2069
DOI:10.1039/c6ra18238k