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Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity
The direct growth of III–V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a c...
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| Published in: | Nano letters 2015-11, Vol.15 (11), p.7189-7198 |
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| Main Authors: | , , , , , |
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| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-a414t-27e5b12f41506fd4ce073a417e4ab311fd1898f91941885381a858193457f7a73 |
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| cites | cdi_FETCH-LOGICAL-a414t-27e5b12f41506fd4ce073a417e4ab311fd1898f91941885381a858193457f7a73 |
| container_end_page | 7198 |
| container_issue | 11 |
| container_start_page | 7189 |
| container_title | Nano letters |
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| creator | Li, Kun Ng, Kar Wei Tran, Thai-Truong D Sun, Hao Lu, Fanglu Chang-Hasnain, Connie J |
| description | The direct growth of III–V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology–the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 103 cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10–10 cm3/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III–V semiconductor materials onto silicon platforms. |
| doi_str_mv | 10.1021/acs.nanolett.5b02869 |
| format | article |
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Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology–the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 103 cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10–10 cm3/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III–V semiconductor materials onto silicon platforms.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/acs.nanolett.5b02869</identifier><identifier>PMID: 26444034</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>Dislocations ; Indium phosphides ; Microscopy, Electron, Transmission ; Nanostructure ; Nanostructures - chemistry ; Nanostructures - ultrastructure ; Nanotechnology ; Nanowires ; Nanowires - chemistry ; Nanowires - ultrastructure ; Semiconductor materials ; Semiconductors ; Silicon ; Silicon - chemistry ; Silicon substrates ; Wurtzite</subject><ispartof>Nano letters, 2015-11, Vol.15 (11), p.7189-7198</ispartof><rights>Copyright © 2015 American Chemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a414t-27e5b12f41506fd4ce073a417e4ab311fd1898f91941885381a858193457f7a73</citedby><cites>FETCH-LOGICAL-a414t-27e5b12f41506fd4ce073a417e4ab311fd1898f91941885381a858193457f7a73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,27957,27958</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/26444034$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Kun</creatorcontrib><creatorcontrib>Ng, Kar Wei</creatorcontrib><creatorcontrib>Tran, Thai-Truong D</creatorcontrib><creatorcontrib>Sun, Hao</creatorcontrib><creatorcontrib>Lu, Fanglu</creatorcontrib><creatorcontrib>Chang-Hasnain, Connie J</creatorcontrib><title>Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>The direct growth of III–V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology–the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 103 cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10–10 cm3/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III–V semiconductor materials onto silicon platforms.</description><subject>Dislocations</subject><subject>Indium phosphides</subject><subject>Microscopy, Electron, Transmission</subject><subject>Nanostructure</subject><subject>Nanostructures - chemistry</subject><subject>Nanostructures - ultrastructure</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Nanowires - chemistry</subject><subject>Nanowires - ultrastructure</subject><subject>Semiconductor materials</subject><subject>Semiconductors</subject><subject>Silicon</subject><subject>Silicon - chemistry</subject><subject>Silicon substrates</subject><subject>Wurtzite</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNqNkF1LwzAUhoMobk7_gUgvvelMmqRJLmXoHEwczg-8Kmmbsoy2mUnKmL_ejH1cilfnwHnecw4PANcIDhFM0J0s3LCVramV90Oaw4Sn4gT0EcUwToVITo89Jz1w4dwSQigwheegl6SEEIhJH3x9dtb_aK_i2UI6VUaTdhY968Kala5raV00tmbdRqaN5rrWRahr7RfR1KyjeWcrWajoVRWmyXUrvQ7jD1WbQvvNJTirZO3U1b4OwPvjw9voKZ6-jCej-2ksCSI-TpiiOUoqgihMq5IUCjIcRkwRmWOEqhJxwSuBBEGcU8yR5JQjgQllFZMMD8Dtbu_Kmu9OOZ812hUqPN8q07kMcUwpSwX7F5okhEEGA0p2aDDhnFVVtrK6kXaTIZht_WfBf3bwn-39h9jN_kKXN6o8hg7CAwB3wDa-NJ1tg5u_d_4CLE-UAA</recordid><startdate>20151111</startdate><enddate>20151111</enddate><creator>Li, Kun</creator><creator>Ng, Kar Wei</creator><creator>Tran, Thai-Truong D</creator><creator>Sun, Hao</creator><creator>Lu, Fanglu</creator><creator>Chang-Hasnain, Connie J</creator><general>American Chemical Society</general><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>FR3</scope><scope>P64</scope><scope>RC3</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20151111</creationdate><title>Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity</title><author>Li, Kun ; Ng, Kar Wei ; Tran, Thai-Truong D ; Sun, Hao ; Lu, Fanglu ; Chang-Hasnain, Connie J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a414t-27e5b12f41506fd4ce073a417e4ab311fd1898f91941885381a858193457f7a73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Dislocations</topic><topic>Indium phosphides</topic><topic>Microscopy, Electron, Transmission</topic><topic>Nanostructure</topic><topic>Nanostructures - chemistry</topic><topic>Nanostructures - ultrastructure</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Nanowires - chemistry</topic><topic>Nanowires - ultrastructure</topic><topic>Semiconductor materials</topic><topic>Semiconductors</topic><topic>Silicon</topic><topic>Silicon - chemistry</topic><topic>Silicon substrates</topic><topic>Wurtzite</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Kun</creatorcontrib><creatorcontrib>Ng, Kar Wei</creatorcontrib><creatorcontrib>Tran, Thai-Truong D</creatorcontrib><creatorcontrib>Sun, Hao</creatorcontrib><creatorcontrib>Lu, Fanglu</creatorcontrib><creatorcontrib>Chang-Hasnain, Connie J</creatorcontrib><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Genetics Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Kun</au><au>Ng, Kar Wei</au><au>Tran, Thai-Truong D</au><au>Sun, Hao</au><au>Lu, Fanglu</au><au>Chang-Hasnain, Connie J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2015-11-11</date><risdate>2015</risdate><volume>15</volume><issue>11</issue><spage>7189</spage><epage>7198</epage><pages>7189-7198</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><abstract>The direct growth of III–V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology–the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 103 cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10–10 cm3/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III–V semiconductor materials onto silicon platforms.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>26444034</pmid><doi>10.1021/acs.nanolett.5b02869</doi><tpages>10</tpages></addata></record> |
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| source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
| subjects | Dislocations Indium phosphides Microscopy, Electron, Transmission Nanostructure Nanostructures - chemistry Nanostructures - ultrastructure Nanotechnology Nanowires Nanowires - chemistry Nanowires - ultrastructure Semiconductor materials Semiconductors Silicon Silicon - chemistry Silicon substrates Wurtzite |
| title | Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity |
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