3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors

This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors （SiGe HBTs）. 3D damaged model of SiGe HBTs single-event effects （SEE） is built by TCAD simulation tools to research ions angled strike dependence....

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Published in:Journal of semiconductors 2014-04, Vol.35 (4), p.56-61
Main Author: 张晋新 郭红霞 文林 郭旗 崔江维 王信 邓伟 郑齐文 范雪 肖尧
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Language:English
Subjects:
3-D
Charge
Collection
Computer simulation
Heterojunction bipolar transistors
Semiconductors
SiGe异质结双极晶体管
Silicon germanides
Strikes
Three dimensional
收集
模拟
电荷
硅锗异质结双极晶体管
诱导
重离子
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container_issue 4
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container_title Journal of semiconductors
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creator 张晋新 郭红霞 文林 郭旗 崔江维 王信 邓伟 郑齐文 范雪 肖尧
description This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors （SiGe HBTs）. 3D damaged model of SiGe HBTs single-event effects （SEE） is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.
doi_str_mv 10.1088/1674-4926/35/4/044003
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We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.</notes><notes>Zhang Jinxin, Guo Hongxia Wen Lin, Guo Qi, Cui Jiangwei, Wang Xin, Deng Wei, Zhen Qiwen Fan Xue , and Xiao Yao（1 Key Laboratory of Functional Materials and Devices for Special Environments ofCAS, Xinjiang Technical Institute of Physics ＆ Chemistry, Chinese Academy of Sciences, Urumqi 830011, China 2Northwest Institution of Nuclear Technology, Xi＇ an 710024, China 3 University of Chinese Academy of Sciences, Beijing 100049, China 4State Key Laboratory of Electronic Thin Films and Integrated Device, University of Electronic Science and Technology of China, Chengdu 610054, China）</notes><notes>ObjectType-Article-1</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-2</notes><notes>content type line 23</notes><abstract>This paper presents 3-D simulation of angled strike heavy-ion induced charge collection in domestic silicon-germanium heterojunction bipolar transistors （SiGe HBTs）. 3D damaged model of SiGe HBTs single-event effects （SEE） is built by TCAD simulation tools to research ions angled strike dependence. We select several different strike angles at variously typical ions strike positions. The charge collection mechanism for each terminal is identified based on analysis of the device structure and simulation results. Charge collection induced by angled strike ions presents a complex situation. Whether the location of device ions enters, as long as ions track through the sensitive volume, it will cause vast charge collection. The amount of charge collection of SiGe HBT is not only related to length of ions track in sensitive volume, but also influenced by STI and distance between ions track and electrodes. The simulation model is useful to research the practical applications of SiGe HBTs in space, and provides a theoretical basis for the further radiation hardening.</abstract><doi>10.1088/1674-4926/35/4/044003</doi><tpages>6</tpages></addata></record>
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source Institute of Physics
subjects 3-D
Charge
Collection
Computer simulation
Heterojunction bipolar transistors
Semiconductors
SiGe异质结双极晶体管
Silicon germanides
Strikes
Three dimensional
收集
模拟
电荷
硅锗异质结双极晶体管
诱导
重离子
title 3-D simulation of angled strike heavy-ion induced charge collection in silicon- germanium heterojunction bipolar transistors
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