Flip-flops soft error rate evaluation approach considering internal single-event transient

The internal single-event transient （SET） induced upset in flip-flops is becoming significant with the increase of the operating frequency. However, the conventional soft error rate （SER） evaluation approach could only produce an approximate upset prediction result caused by the internal SET. In thi...

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Published in:Science China. Information sciences 2015-06, Vol.58 (6), p.155-166
Main Authors: Song, RuiQiang, Chen, ShuMing, He, YiBai, Du, YanKang
Format: Article
Language:English
Subjects:
Approximation
China
Chip formation
Computer Science
Computer simulation
Cross sections
Flip-flops
Information Systems and Communication Service
Mathematical models
Monte Carlo simulation
Research Paper
Single event upsets
Soft errors
内部设置
单事件
瞬态
蒙特卡罗模拟
触发器
评价方法
评估方法
软错误率
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creator Song, RuiQiang
Chen, ShuMing
He, YiBai
Du, YanKang
description The internal single-event transient （SET） induced upset in flip-flops is becoming significant with the increase of the operating frequency. However, the conventional soft error rate （SER） evaluation approach could only produce an approximate upset prediction result caused by the internal SET. In this paper, we propose an improved SER evaluation approach based on Monte Carlo simulation. A novel SET-based upset model is implemented in the proposed evaluation approach to accurately predict upsets caused by the internal SET. A test chip was fabricated in a commercial 65 nm bulk process to validate the accuracy of the improved SER evaluation approach. The predicted single-event upset cross-sections are consistent with the experimental data.
doi_str_mv 10.1007/s11432-014-5260-z
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subjects Approximation
China
Chip formation
Computer Science
Computer simulation
Cross sections
Flip-flops
Information Systems and Communication Service
Mathematical models
Monte Carlo simulation
Research Paper
Single event upsets
Soft errors
内部设置
单事件
瞬态
蒙特卡罗模拟
触发器
评价方法
评估方法
软错误率
title Flip-flops soft error rate evaluation approach considering internal single-event transient
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