Study on the effects of different sulfur vaporization temperature on the properties of CuInS2 thin films

► CIS thin films were synthesized by sulfurization of In/Cu metallic precursor. ► Effects of S vaporization temperatures on the properties of CIS thin films were investigated. ► The low cost and high PCE of TFSCs can be fabricated using CIS absorber layer. CuInS2 (CIS) absorber thin films were prepa...

Full description

Saved in:
Bibliographic Details
Published in:Applied surface science 2013-04, Vol.270, p.572-577
Main Authors: Shin, Seung Wook, Han, Jun Hee, Lee, Jeong Yong, Park, Yeon Chan, Agawane, G.L., Moholkar, A.V., Gang, Myeong-Gil, Jeong, Chae Hwan, Kim, Jin Hyeok, Yun, Jae Ho
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Copper
Cross-disciplinary physics: materials science
rheology
CuInS2 (CIS)
Diffraction
Energy gap
Exact sciences and technology
Low cost process
Optical properties
Phases
Physics
Precursors
S powder
Stoichiometry
Sulfurization
Thin film solar cells (TFSCs)
Thin films
Vaporization
Vaporization temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:► CIS thin films were synthesized by sulfurization of In/Cu metallic precursor. ► Effects of S vaporization temperatures on the properties of CIS thin films were investigated. ► The low cost and high PCE of TFSCs can be fabricated using CIS absorber layer. CuInS2 (CIS) absorber thin films were prepared by sulfurization of In/Cu metallic stacked precursor. The precursor thin films were sulfurized using a commercial furnace system in the S2 (s)+Ar atmosphere at 425°C for 1h. Effects of different S vapor temperature from 150 to 400°C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction and Raman studies showed that the sulfurized thin films with S vaporization temperature below 300°C exhibited CIS tetragonal structure with secondary phases such as CuxSy, CuIn5S8, and InxSy. The sulfurized thin films with S vaporization temperature over 350°C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu+In) ratio in the CIS thin films with S vaporization temperature over 350°C were 1.0–1.2 and 0.9–1.1, respectively, while compositional ratio deviated from stoichiometry when the sulfurized thin films below S vaporization temperature of 350°C. Optical study showed that the band gap energy and the absorption coefficient of CIS thin films were estimated from 1.18eV to 1.5eV and over 104cm−1, respectively.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.01.087