Strain compensated 1120 nm GaInAs/GaAs vertical external-cavity surface-emitting laser grown by molecular beam epitaxy

We report on the development of high quality, strain compensated gain mirror for 1120 nm vertical external-cavity surface-emitting lasers (VECSELs). The gain mirror was grown by molecular beam epitaxy and comprised a total of six Ga 0.69In 0.31As quantum wells. The effect of the strain compensation...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2011-11, Vol.335 (1), p.4-9
Main Authors: Ranta, Sanna, Hakkarainen, Teemu, Tavast, Miki, Lindfors, Jukka, Leinonen, Tomi, Guina, Mircea
Format: Article
Language:English
Subjects:
A3. Molecular beam epitaxy
Annealing
B2. Semiconducting III–V materials
B3. Semiconductor disk lasers
B3. Strain compensation
B3. Vertical external cavity surface emitting lasers
Compensation
Curvature
Gain
Gallium arsenide
Molecular beam epitaxy
Strain
Surface emitting lasers
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on the development of high quality, strain compensated gain mirror for 1120 nm vertical external-cavity surface-emitting lasers (VECSELs). The gain mirror was grown by molecular beam epitaxy and comprised a total of six Ga 0.69In 0.31As quantum wells. The effect of the strain compensation has been assessed by measuring the curvature of the wafer and by mapping the photoluminescence to identify the non-emissive dark areas. We demonstrate that ∼91% strain compensation with GaAs 0.85P 0.15 is sufficient to remove the dark lines corresponding to areas with structural defects in the gain mirror structure. Rapid thermal annealing studies revealed that the strain compensation is efficient in preventing the appearance of dark lines even for samples that were annealed at temperatures as high as 700 °C for a considerable time. The strain compensated gain mirror was used to demonstrate a VECSEL emitting at 1120 nm. ► We developed a strain compensated gain mirror for 1120 nm VECSELs. ► The gain region contained Ga 0.69In 0.31As QWs and GaAs 0.85P 0.15 strain compensation layers. ► The strain was assessed by measuring the wafer curvature and dark lines. ► ∼91% strain compensation is sufficient to remove the dark lines. ► The appearance of dark lines was also avoided for thermally annealed samples.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.08.044