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Effects of the HfO2 sinterization temperature on the erbium luminescence
The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied. Samples were prepared using sinterization temperatures of 400, 600, 800, and 1000°C over periods of 12 and 24h. Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I1...
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| Published in: | Journal of luminescence 2014-01, Vol.145, p.713-716 |
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| Main Authors: | , , , , , , |
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| cited_by | cdi_FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843 |
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| cites | cdi_FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843 |
| container_end_page | 716 |
| container_issue | |
| container_start_page | 713 |
| container_title | Journal of luminescence |
| container_volume | 145 |
| creator | Ordóñez-Romero, César L. Flores J, C. Hernández A, J. Camarillo G., E. Cabrera B., E. Garcia-Hipólito, Manuel Murrieta S., H. |
| description | The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied. Samples were prepared using sinterization temperatures of 400, 600, 800, and 1000°C over periods of 12 and 24h. Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified, and this allows for the study of the incorporation of Er3+ in the HfO2 matrix. Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature. The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.
•The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied.•Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified.•Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature.•The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix. |
| doi_str_mv | 10.1016/j.jlumin.2013.08.050 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1531014549</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022231313005279</els_id><sourcerecordid>1531014549</sourcerecordid><originalsourceid>FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKv_wMNeBC-7TpLNNrkIUtQKhV70HLLZCabsR012Bf31prZ49DQMPDPvzEPINYWCAq3utsW2nTrfFwwoL0AWIOCEzKhcsHwhJT8lMwDGcsYpPycXMW4BgCupZmT16BzaMWaDy8Z3zFZuw7Lo-xGD_zajH_psxG6HwYxTwGzfJgpD7acu-w3FaLG3eEnOnGkjXh3rnLw9Pb4uV_l68_yyfFjnlldqzA1UTinDRVVZugBnrTOyMaJ2wtSS16xRXKpa1qWoTF0qULyxtWCoVImNLPmc3B727sLwMWEcdefTBW1rehymqKngyUkpSpXQ8oDaMMQY0Old8J0JX5qC3ovTW30Qp_fiNEidxKWxm2OCida0Lpje-vg3yySUIklN3P2Bw_Tup8ego_V7FY0PSaluBv9_0A_CcIZA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1531014549</pqid></control><display><type>article</type><title>Effects of the HfO2 sinterization temperature on the erbium luminescence</title><source>Elsevier</source><creator>Ordóñez-Romero, César L. ; Flores J, C. ; Hernández A, J. ; Camarillo G., E. ; Cabrera B., E. ; Garcia-Hipólito, Manuel ; Murrieta S., H.</creator><creatorcontrib>Ordóñez-Romero, César L. ; Flores J, C. ; Hernández A, J. ; Camarillo G., E. ; Cabrera B., E. ; Garcia-Hipólito, Manuel ; Murrieta S., H.</creatorcontrib><description>The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied. Samples were prepared using sinterization temperatures of 400, 600, 800, and 1000°C over periods of 12 and 24h. Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified, and this allows for the study of the incorporation of Er3+ in the HfO2 matrix. Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature. The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.
•The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied.•Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified.•Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature.•The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.</description><identifier>ISSN: 0022-2313</identifier><identifier>EISSN: 1872-7883</identifier><identifier>DOI: 10.1016/j.jlumin.2013.08.050</identifier><identifier>CODEN: JLUMA8</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Emission ; Erbium ; Exact sciences and technology ; Excitation ; Ground state ; Hafnium oxide ; Luminescence ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics</subject><ispartof>Journal of luminescence, 2014-01, Vol.145, p.713-716</ispartof><rights>2013 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843</citedby><cites>FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,786,790,4043,27956,27957,27958</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28045883$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ordóñez-Romero, César L.</creatorcontrib><creatorcontrib>Flores J, C.</creatorcontrib><creatorcontrib>Hernández A, J.</creatorcontrib><creatorcontrib>Camarillo G., E.</creatorcontrib><creatorcontrib>Cabrera B., E.</creatorcontrib><creatorcontrib>Garcia-Hipólito, Manuel</creatorcontrib><creatorcontrib>Murrieta S., H.</creatorcontrib><title>Effects of the HfO2 sinterization temperature on the erbium luminescence</title><title>Journal of luminescence</title><description>The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied. Samples were prepared using sinterization temperatures of 400, 600, 800, and 1000°C over periods of 12 and 24h. Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified, and this allows for the study of the incorporation of Er3+ in the HfO2 matrix. Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature. The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.
•The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied.•Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified.•Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature.•The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Emission</subject><subject>Erbium</subject><subject>Exact sciences and technology</subject><subject>Excitation</subject><subject>Ground state</subject><subject>Hafnium oxide</subject><subject>Luminescence</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0022-2313</issn><issn>1872-7883</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWKv_wMNeBC-7TpLNNrkIUtQKhV70HLLZCabsR012Bf31prZ49DQMPDPvzEPINYWCAq3utsW2nTrfFwwoL0AWIOCEzKhcsHwhJT8lMwDGcsYpPycXMW4BgCupZmT16BzaMWaDy8Z3zFZuw7Lo-xGD_zajH_psxG6HwYxTwGzfJgpD7acu-w3FaLG3eEnOnGkjXh3rnLw9Pb4uV_l68_yyfFjnlldqzA1UTinDRVVZugBnrTOyMaJ2wtSS16xRXKpa1qWoTF0qULyxtWCoVImNLPmc3B727sLwMWEcdefTBW1rehymqKngyUkpSpXQ8oDaMMQY0Old8J0JX5qC3ovTW30Qp_fiNEidxKWxm2OCida0Lpje-vg3yySUIklN3P2Bw_Tup8ego_V7FY0PSaluBv9_0A_CcIZA</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>Ordóñez-Romero, César L.</creator><creator>Flores J, C.</creator><creator>Hernández A, J.</creator><creator>Camarillo G., E.</creator><creator>Cabrera B., E.</creator><creator>Garcia-Hipólito, Manuel</creator><creator>Murrieta S., H.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201401</creationdate><title>Effects of the HfO2 sinterization temperature on the erbium luminescence</title><author>Ordóñez-Romero, César L. ; Flores J, C. ; Hernández A, J. ; Camarillo G., E. ; Cabrera B., E. ; Garcia-Hipólito, Manuel ; Murrieta S., H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Emission</topic><topic>Erbium</topic><topic>Exact sciences and technology</topic><topic>Excitation</topic><topic>Ground state</topic><topic>Hafnium oxide</topic><topic>Luminescence</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ordóñez-Romero, César L.</creatorcontrib><creatorcontrib>Flores J, C.</creatorcontrib><creatorcontrib>Hernández A, J.</creatorcontrib><creatorcontrib>Camarillo G., E.</creatorcontrib><creatorcontrib>Cabrera B., E.</creatorcontrib><creatorcontrib>Garcia-Hipólito, Manuel</creatorcontrib><creatorcontrib>Murrieta S., H.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ordóñez-Romero, César L.</au><au>Flores J, C.</au><au>Hernández A, J.</au><au>Camarillo G., E.</au><au>Cabrera B., E.</au><au>Garcia-Hipólito, Manuel</au><au>Murrieta S., H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of the HfO2 sinterization temperature on the erbium luminescence</atitle><jtitle>Journal of luminescence</jtitle><date>2014-01</date><risdate>2014</risdate><volume>145</volume><spage>713</spage><epage>716</epage><pages>713-716</pages><issn>0022-2313</issn><eissn>1872-7883</eissn><coden>JLUMA8</coden><notes>ObjectType-Article-2</notes><notes>SourceType-Scholarly Journals-1</notes><notes>ObjectType-Feature-1</notes><notes>content type line 23</notes><abstract>The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied. Samples were prepared using sinterization temperatures of 400, 600, 800, and 1000°C over periods of 12 and 24h. Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified, and this allows for the study of the incorporation of Er3+ in the HfO2 matrix. Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature. The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.
•The effect of the sinterization temperature of erbium doped hafnium oxide on erbium ion luminescence is studied.•Transitions from the excited states 4F7/2 and 4S3/2 to the ground state 4I15/2 are identified.•Results show that the Er3+ ions can occupy different sites in the host and the resulting optical behavior depends on the sinterization temperature.•The emission efficiency does not depend exclusively on the sinterization temperature but also on the site occupied in the host matrix.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jlumin.2013.08.050</doi><tpages>4</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Emission Erbium Exact sciences and technology Excitation Ground state Hafnium oxide Luminescence Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
| title | Effects of the HfO2 sinterization temperature on the erbium luminescence |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-09-21T11%3A44%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20the%20HfO2%20sinterization%20temperature%20on%20the%20erbium%20luminescence&rft.jtitle=Journal%20of%20luminescence&rft.au=Ord%C3%B3%C3%B1ez-Romero,%20C%C3%A9sar%20L.&rft.date=2014-01&rft.volume=145&rft.spage=713&rft.epage=716&rft.pages=713-716&rft.issn=0022-2313&rft.eissn=1872-7883&rft.coden=JLUMA8&rft_id=info:doi/10.1016/j.jlumin.2013.08.050&rft_dat=%3Cproquest_cross%3E1531014549%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c369t-a06f99a3566c170fccfa8da5bf5ab83b2d9389b8b456ab49093dcb52e994ed843%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1531014549&rft_id=info:pmid/&rfr_iscdi=true |